Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC

G Brauer, W Anwand, P G Coleman, W Skorupa

Research output: Contribution to journal › Article › peer-review

5 Citations (SciVal)

ID number: ISI:000229617500005

Cite this

@article{4aceb5268282489f87c8fe0856fe1825,

title = "Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC",

author = "G Brauer and W Anwand and Coleman, {P G} and W Skorupa",

note = "ID number: ISI:000229617500005",

year = "2005",

language = "English",

volume = "78",

pages = "131--136",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier",

number = "2-4",

}