Size-effects and tuning of phase coherence in a double quantum well mesoscopic wire

MJ Gompertz, Thomas Ihn, pc main, Alain Nogaret, L Eaves, M Henini, sp beaumont

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have investigated the magnetoresistance properties of mesoscopic wires fabricated from a modulation-doped GaAs/(AlGa)As double quantum well structure containing two coupled 2D electron gases (2DEGs). An in-plane magnetic field, B, “tunes” the tunnelling between the 2DEGs and, in a Hall bar device, leads to a resistance feature at B≈10T due to a van Hove singularity in the density of states. In mesoscopic wires this feature becomes a strong resistance peak. We attribute this enhancement to a size effect. In addition, we observe universal conductance fluctuations with the in-plane B. These disappear when B is strong enough to suppress the tunnelling between the wells.
Original languageEnglish
Pages (from-to)162-165
Number of pages4
JournalPhysica B: Condensed Matter
Volume249 - 251
DOIs
Publication statusPublished - 17 Jun 1998

Fingerprint

phase coherence
tuning
quantum wells
wire
electron gas
trucks
modulation
augmentation
magnetic fields

Cite this

Size-effects and tuning of phase coherence in a double quantum well mesoscopic wire. / Gompertz, MJ; Ihn, Thomas; main, pc; Nogaret, Alain; Eaves, L; Henini, M; beaumont, sp.

In: Physica B: Condensed Matter, Vol. 249 - 251, 17.06.1998, p. 162-165.

Research output: Contribution to journalArticle

Gompertz, MJ ; Ihn, Thomas ; main, pc ; Nogaret, Alain ; Eaves, L ; Henini, M ; beaumont, sp. / Size-effects and tuning of phase coherence in a double quantum well mesoscopic wire. In: Physica B: Condensed Matter. 1998 ; Vol. 249 - 251. pp. 162-165.
@article{7cbc300fe1de4a5390c2c9dcdfd8a1fc,
title = "Size-effects and tuning of phase coherence in a double quantum well mesoscopic wire",
abstract = "We have investigated the magnetoresistance properties of mesoscopic wires fabricated from a modulation-doped GaAs/(AlGa)As double quantum well structure containing two coupled 2D electron gases (2DEGs). An in-plane magnetic field, B, “tunes” the tunnelling between the 2DEGs and, in a Hall bar device, leads to a resistance feature at B≈10T due to a van Hove singularity in the density of states. In mesoscopic wires this feature becomes a strong resistance peak. We attribute this enhancement to a size effect. In addition, we observe universal conductance fluctuations with the in-plane B. These disappear when B is strong enough to suppress the tunnelling between the wells.",
author = "MJ Gompertz and Thomas Ihn and pc main and Alain Nogaret and L Eaves and M Henini and sp beaumont",
year = "1998",
month = "6",
day = "17",
doi = "10.1016/S0921-4526(98)00090-8",
language = "English",
volume = "249 - 251",
pages = "162--165",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",

}

TY - JOUR

T1 - Size-effects and tuning of phase coherence in a double quantum well mesoscopic wire

AU - Gompertz, MJ

AU - Ihn, Thomas

AU - main, pc

AU - Nogaret, Alain

AU - Eaves, L

AU - Henini, M

AU - beaumont, sp

PY - 1998/6/17

Y1 - 1998/6/17

N2 - We have investigated the magnetoresistance properties of mesoscopic wires fabricated from a modulation-doped GaAs/(AlGa)As double quantum well structure containing two coupled 2D electron gases (2DEGs). An in-plane magnetic field, B, “tunes” the tunnelling between the 2DEGs and, in a Hall bar device, leads to a resistance feature at B≈10T due to a van Hove singularity in the density of states. In mesoscopic wires this feature becomes a strong resistance peak. We attribute this enhancement to a size effect. In addition, we observe universal conductance fluctuations with the in-plane B. These disappear when B is strong enough to suppress the tunnelling between the wells.

AB - We have investigated the magnetoresistance properties of mesoscopic wires fabricated from a modulation-doped GaAs/(AlGa)As double quantum well structure containing two coupled 2D electron gases (2DEGs). An in-plane magnetic field, B, “tunes” the tunnelling between the 2DEGs and, in a Hall bar device, leads to a resistance feature at B≈10T due to a van Hove singularity in the density of states. In mesoscopic wires this feature becomes a strong resistance peak. We attribute this enhancement to a size effect. In addition, we observe universal conductance fluctuations with the in-plane B. These disappear when B is strong enough to suppress the tunnelling between the wells.

U2 - 10.1016/S0921-4526(98)00090-8

DO - 10.1016/S0921-4526(98)00090-8

M3 - Article

VL - 249 - 251

SP - 162

EP - 165

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -