Abstract
We have investigated the magnetoresistance properties of mesoscopic wires fabricated from a modulation-doped GaAs/(AlGa)As double quantum well structure containing two coupled 2D electron gases (2DEGs). An in-plane magnetic field, B, “tunes” the tunnelling between the 2DEGs and, in a Hall bar device, leads to a resistance feature at B≈10T due to a van Hove singularity in the density of states. In mesoscopic wires this feature becomes a strong resistance peak. We attribute this enhancement to a size effect. In addition, we observe universal conductance fluctuations with the in-plane B. These disappear when B is strong enough to suppress the tunnelling between the wells.
Original language | English |
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Pages (from-to) | 162-165 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 249 - 251 |
DOIs | |
Publication status | Published - 17 Jun 1998 |