Abstract
The next generation of local oscillator terahertz sources will demand novel and efficient power-combined frequency multiplier structures able to handle the increasing available power provided by state-of-the-art solid-state sources and amplifiers at W-band. In this paper, we give a brief overview of the different proposed alternatives and describe a new concept of frequency multiplier featuring two GaAs Schottky diode based MMIC chips on a single wave-guide structure. This scheme adds an extra symmetry to the multiplier circuit with respect to previously reported power-combined structures, increasing the power handling capabilities of frequency multipliers by an additional factor of two. GaAs foundry, post-processing, waveguide
block micromachining and testing will be fully performed
within the European Union.
Original language | English |
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Pages | 234-237 |
Number of pages | 4 |
Publication status | Published - Sept 2010 |
Event | European Microwave Integrated Circuits Conference - Paris, France Duration: 27 Sept 2010 → 28 Sept 2010 |
Conference
Conference | European Microwave Integrated Circuits Conference |
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Country/Territory | France |
City | Paris |
Period | 27/09/10 → 28/09/10 |