The next generation of local oscillator terahertz sources will demand novel and efficient power-combined frequency multiplier structures able to handle the increasing available power provided by state-of-the-art solid-state sources and amplifiers at W-band. In this paper, we give a brief overview of the different proposed alternatives and describe a new concept of frequency multiplier featuring two GaAs Schottky diode based MMIC chips on a single wave-guide structure. This scheme adds an extra symmetry to the multiplier circuit with respect to previously reported power-combined structures, increasing the power handling capabilities of frequency multipliers by an additional factor of two. GaAs foundry, post-processing, waveguide block micromachining and testing will be fully performed within the European Union.
|Number of pages||4|
|Publication status||Published - Sep 2010|
|Event||European Microwave Integrated Circuits Conference - Paris, France|
Duration: 27 Sep 2010 → 28 Sep 2010
|Conference||European Microwave Integrated Circuits Conference|
|Period||27/09/10 → 28/09/10|