Single-waveguide power-combined multipliers for next generation LO sources above 100 GHz

J V Siles, A Maestrini, Steven Davies, B Alderman, H Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The next generation of local oscillator terahertz sources will demand novel and efficient power-combined frequency multiplier structures able to handle the increasing available power provided by state-of-the-art solid-state sources and amplifiers at W-band. In this paper, we give a brief overview of the different proposed alternatives and describe a new concept of frequency multiplier featuring two GaAs Schottky diode based MMIC chips on a single wave-guide structure. This scheme adds an extra symmetry to the multiplier circuit with respect to previously reported power-combined structures, increasing the power handling capabilities of frequency multipliers by an additional factor of two. GaAs foundry, post-processing, waveguide block micromachining and testing will be fully performed within the European Union.
Original languageEnglish
Title of host publication5th European Microwave Integrated Circuits Conference (EuMIC), 2010
Place of PublicationPiscataway, U. S. A.
PublisherIEEE
Pages234-237
Number of pages4
ISBN (Print)9781424472314
Publication statusPublished - 2010
Event13th European Microwave Week 2010: Connecting the World - Paris, France
Duration: 26 Sep 20101 Oct 2010

Conference

Conference13th European Microwave Week 2010
Abbreviated titleEuMIC 2010
CountryFrance
CityParis
Period26/09/101/10/10

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    Siles, J. V., Maestrini, A., Davies, S., Alderman, B., & Wang, H. (2010). Single-waveguide power-combined multipliers for next generation LO sources above 100 GHz. In 5th European Microwave Integrated Circuits Conference (EuMIC), 2010 (pp. 234-237). [5613681] IEEE. http://ieeexplore.ieee.org/document/5613681/