Simulation of widebandgap multi-quantum well light emitting diodes

D. Oriato; Alison B. Walker; W. N. Wang

doi:10.1155/2001/14941

Simulation of widebandgap multi-quantum well light emitting diodes

D. Oriato, Alison B. Walker, W. N. Wang

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (SciVal)

Abstract

Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.

Original language	English
Pages (from-to)	295-299
Number of pages	5
Journal	VLSI Design
Volume	13
Issue number	1-4
DOIs	https://doi.org/10.1155/2001/14941
Publication status	Published - 2001

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ID number: ISI:000173295000045

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title = "Simulation of widebandgap multi-quantum well light emitting diodes",

abstract = "Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.",

author = "D. Oriato and Walker, {Alison B.} and Wang, {W. N.}",

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doi = "10.1155/2001/14941",

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journal = "VLSI Design",

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AU - Oriato, D.

AU - Walker, Alison B.

AU - Wang, W. N.

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PY - 2001

Y1 - 2001

N2 - Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.

AB - Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.

UR - http://dx.doi.org/10.1155/2001/14941

U2 - 10.1155/2001/14941

DO - 10.1155/2001/14941

M3 - Article

SN - 1065-514X

VL - 13

SP - 295

EP - 299

JO - VLSI Design

JF - VLSI Design

IS - 1-4

ER -

Simulation of widebandgap multi-quantum well light emitting diodes

Abstract

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