Simulation of widebandgap multi-quantum well light emitting diodes

D. Oriato, Alison B. Walker, W. N. Wang

Research output: Contribution to journalArticlepeer-review

2 Citations (SciVal)


Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.
Original languageEnglish
Pages (from-to)295-299
Number of pages5
JournalVLSI Design
Issue number1-4
Publication statusPublished - 2001

Bibliographical note

ID number: ISI:000173295000045


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