Simulation of widebandgap multi-quantum well light emitting diodes

D. Oriato, Alison B. Walker, W. N. Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.
Original languageEnglish
Pages (from-to)295-299
Number of pages5
JournalVLSI Design
Volume13
Issue number1-4
DOIs
Publication statusPublished - 2001

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