Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon

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ID number: ISI:000173612900015

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@article{b700698064bb4ed7ba7a0c57088c72af,

title = "Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon",

author = "Coleman, \{P G\} and Burrows, \{C P\} and Knights, \{A P\}",

note = "ID number: ISI:000173612900015",

year = "2002",

doi = "10.1063/1.1448856",

language = "English",

volume = "80",

pages = "947--949",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon

AU - Coleman, P G

AU - Burrows, C P

AU - Knights, A P

N1 - ID number: ISI:000173612900015

PY - 2002

Y1 - 2002

U2 - 10.1063/1.1448856

DO - 10.1063/1.1448856

M3 - Article

SN - 0003-6951

VL - 80

SP - 947

EP - 949

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -