Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon

P G Coleman, C P Burrows, A P Knights

Research output: Contribution to journal › Article › peer-review

32 Citations (SciVal)

ID number: ISI:000173612900015

Cite this

@article{b700698064bb4ed7ba7a0c57088c72af,

title = "Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon",

author = "Coleman, {P G} and Burrows, {C P} and Knights, {A P}",

note = "ID number: ISI:000173612900015",

year = "2002",

language = "English",

volume = "80",

pages = "947--949",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "6",

}