Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon

P G Coleman, C P Burrows, A P Knights

Research output: Contribution to journalArticlepeer-review

32 Citations (SciVal)
Original languageEnglish
Pages (from-to)947-949
Number of pages3
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2002

Bibliographical note

ID number: ISI:000173612900015

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