Silicon based optical devices - photonic applications of anisotropically nanostructured silicon

J Diener, N Kunzner, E Gross, D Kovalev, M Fujii

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Anisotropic nanostructuring of bulk silicon (Si) wafers leads to a significant in-plane optical anisotropy of single porous silicon (PSi) layers. Additionally a variation of the etching current in time allows a controlled modification of the porosity along the growth direction and therefore a three-dimensional variation of the refractive index (in-plane and in-depth). This technique can be important for photonic applications since it is the basis of a development of a variety of novel, polarization-sensitive, silicon-based optical devices: retarders, dichroic Bragg reflectors, dichroic microcavities and planar Si-based polarizers. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish
Pages (from-to)1432-1436
Number of pages5
JournalPhysica Status Solidi A: Applications and Materials Science
Volume202
Issue number8
DOIs
Publication statusPublished - 2005

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Silicon
Optical devices
Photonics
photonics
Bragg reflectors
Optical anisotropy
retarders (devices)
Microcavities
Porous silicon
silicon
Silicon wafers
Etching
Refractive index
Porosity
Polarization
polarizers
porous silicon
etching
wafers
refractivity

Cite this

Silicon based optical devices - photonic applications of anisotropically nanostructured silicon. / Diener, J; Kunzner, N; Gross, E; Kovalev, D; Fujii, M.

In: Physica Status Solidi A: Applications and Materials Science, Vol. 202, No. 8, 2005, p. 1432-1436.

Research output: Contribution to journalArticle

Diener, J ; Kunzner, N ; Gross, E ; Kovalev, D ; Fujii, M. / Silicon based optical devices - photonic applications of anisotropically nanostructured silicon. In: Physica Status Solidi A: Applications and Materials Science. 2005 ; Vol. 202, No. 8. pp. 1432-1436.
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