Short channel effects in double gate polycrystalline silicon SLS ELA TFTs

D. C. Moschou, D. N. Kouvatsos, I. Pappas, C. Dimitriadis, A. T. Voutsas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Short channel effects in double gate poly-Si SLS ELA TFTs are studied in this work by electrically characterizing devices with varying top gate length and constant bottom gate length. The electrical parameters were extracted for different bottom gate biases, observing a V th increase with increasing channel length, attributed to more traps present within larger channels. This was also probed through the increase of V g,max-V th with increasing channel length. In order to distinguish between short channel effects and possible L top/L bottom effects, devices with different bottom gate lengths and a constant top gate length were also studied. No similar trends as in the case of decreasing channel length were observed, thus supporting our case that the previously observed behavior is mainly an effect of channel shrinking and not of L top/L bottom effects.

Original languageEnglish
Title of host publicationProceedings of the 28th International Conference on Microelectronics (MIEL), 2012
Pages91-94
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 28th International Conference on Microelectronics, MIEL 2012 - Nis, Serbia
Duration: 13 May 201216 May 2012

Conference

Conference2012 28th International Conference on Microelectronics, MIEL 2012
Country/TerritorySerbia
CityNis
Period13/05/1216/05/12

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