Shallow defects in Cu2ZnSnS4

K Hönes, E Zscherpel, Jonathan Scragg, S Siebentritt

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75 Citations (SciVal)


Cu2SnZnS4 is a promising candidate for thin film solar cells with absorbers made of non-toxic and abundant elements. So far very little effort has been put into understanding the basic material properties. We investigate vapour phase grown Cu2SnZnS4 crystals by temperature and intensity dependent photoluminescence measurements. We observe for the first time narrow photoluminescence peaks, which allow us to determine defect levels and to propose a defect recombination model for Cu2SnZnS4. Assuming an exciton binding energy of 10 meV, we find an energy gap of 1.519 eV at 10K. From the observed DA transitions we derive the energies of two shallow acceptor states 10 +/- 5 and 30 +/- 5 meV above the valence band and one shallow donor state 5 +/- 3 meV below the conduction band.
Original languageEnglish
Pages (from-to)4949-4952
Number of pages4
JournalPhysica B Condensed Matter
Issue number23-24
Publication statusPublished - 15 Dec 2009
Event25th International Conference on Defects in Semiconductors - St Petersburg, Russian Federation
Duration: 20 Jul 200924 Jul 2009


  • kesterites
  • defects
  • photoluminescence spectroscopy


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