Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding

Kei Takashina; M Nagase; K Nishiguchi; Y Ono; H Omi; A Fujiwara; T Fujisawa; K Muraki

doi:10.1088/0268-1242/25/12/125001

Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding

Kei Takashina
, M Nagase
, K Nishiguchi
, Y Ono
, H Omi
, A Fujiwara
, T Fujisawa
, K Muraki

Department of Physics

Research output: Contribution to journal › Article › peer-review

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Abstract

A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility

Original language	English
Article number	125001
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	25
Issue number	12
Early online date	3 Nov 2010
DOIs	https://doi.org/10.1088/0268-1242/25/12/125001
Publication status	Published - Dec 2010

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The definitive version is available as: Takashina, K., Nagase, M., Nishiguchi, K., Ono, Y., Omi, H., Fujiwara, A., Fujisawa, T. and Muraki, K., 2010. Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding. Semiconductor Science and Technology, 25 (12), 125001. Available from: http://dx.doi.org/10.1088/0268-1242/25/12/125001
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Cite this

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abstract = "A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility",

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AU - Takashina, Kei

AU - Nagase, M

AU - Nishiguchi, K

AU - Ono, Y

AU - Omi, H

AU - Fujiwara, A

AU - Fujisawa, T

AU - Muraki, K

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AB - A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility

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Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding

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