Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding

Kei Takashina, M Nagase, K Nishiguchi, Y Ono, H Omi, A Fujiwara, T Fujisawa, K Muraki

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Abstract

A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility
Original languageEnglish
Article number125001
Number of pages4
JournalSemiconductor Science and Technology
Volume25
Issue number12
Early online date3 Nov 2010
DOIs
Publication statusPublished - Dec 2010

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