Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding

Kei Takashina, M Nagase, K Nishiguchi, Y Ono, H Omi, A Fujiwara, T Fujisawa, K Muraki

Research output: Contribution to journalArticle

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Abstract

A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility
Original languageEnglish
Article number125001
Number of pages4
JournalSemiconductor Science and Technology
Volume25
Issue number12
Early online date3 Nov 2010
DOIs
Publication statusPublished - Dec 2010

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Monocrystalline silicon
Wafer bonding
Amorphous silicon
Silicon Dioxide
amorphous silicon
Silica
wafers
silicon dioxide
Galvanomagnetic effects
silicon
Silicon
Bias voltage
Cryogenics
Oxides
Electrons
cryogenic temperature
surface layers
insulators
Temperature
oxides

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Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding. / Takashina, Kei; Nagase, M; Nishiguchi, K; Ono, Y; Omi, H; Fujiwara, A; Fujisawa, T; Muraki, K.

In: Semiconductor Science and Technology, Vol. 25, No. 12, 125001, 12.2010.

Research output: Contribution to journalArticle

Takashina, Kei ; Nagase, M ; Nishiguchi, K ; Ono, Y ; Omi, H ; Fujiwara, A ; Fujisawa, T ; Muraki, K. / Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding. In: Semiconductor Science and Technology. 2010 ; Vol. 25, No. 12.
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