TY - JOUR
T1 - Separately contacted monocrystalline silicon double-layer structure with an amorphous silicon dioxide barrier made by wafer bonding
AU - Takashina, Kei
AU - Nagase, M
AU - Nishiguchi, K
AU - Ono, Y
AU - Omi, H
AU - Fujiwara, A
AU - Fujisawa, T
AU - Muraki, K
PY - 2010/12
Y1 - 2010/12
N2 - A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility
AB - A double layer of monocrystalline silicon separated by a 23.5 nm silicon dioxide barrier is fabricated by bonding two silicon-on-insulator wafers with oxidized surface layers. The two layers are separately contacted allowing transport measurements through individual layers and a bias voltage to be applied between the layers. Four-terminal magnetotransport measurements at cryogenic temperatures on electrons generated close to the central oxide barrier show reasonable mobility
UR - http://www.scopus.com/inward/record.url?scp=78650450117&partnerID=8YFLogxK
UR - http://dx.doi.org/10.1088/0268-1242/25/12/125001
U2 - 10.1088/0268-1242/25/12/125001
DO - 10.1088/0268-1242/25/12/125001
M3 - Article
SN - 0268-1242
VL - 25
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 12
M1 - 125001
ER -