Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors

T Pochet, Adelina Ilie, A Brambilla, B Equer

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

20 μm thick p-i-n diodes were deposited at high rate using a PECVD process. The p-i-n structures have been specifically tailored in order to sustain high reverse bias voltages and exhibit low leakage currents. Mean electric fields up to 5.105 V/cm have been applied to our devices. We report the electrical characterization of such devices in terms of I(V,T) curves. Different regimes have been identified and the activation energy of the reverse current is deduced. A spectral analysis of the noise has been performed. Electronic transport of both electrons and holes has been studied using a time of flight technique. Finally, the detector response to alpha and beta particles, and X-rays has been studied in order to measure the collection efficiencies of thick a-Si:H detectors
Original languageEnglish
Pages (from-to)1452 - 1457
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume43
Issue number3
DOIs
Publication statusPublished - Jun 1996

Fingerprint

Amorphous silicon
amorphous silicon
Detectors
p-i-n diodes
beta particles
detectors
Plasma enhanced chemical vapor deposition
Bias voltage
Leakage currents
Spectrum analysis
alpha particles
spectrum analysis
Diodes
leakage
Activation energy
Electric fields
activation energy
X rays
electric fields
Electrons

Cite this

Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors. / Pochet, T; Ilie, Adelina; Brambilla, A; Equer, B.

In: IEEE Transactions on Nuclear Science, Vol. 43, No. 3, 06.1996, p. 1452 - 1457.

Research output: Contribution to journalArticle

Pochet, T ; Ilie, Adelina ; Brambilla, A ; Equer, B. / Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors. In: IEEE Transactions on Nuclear Science. 1996 ; Vol. 43, No. 3. pp. 1452 - 1457.
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