Selective excitation of spin-flip Raman scattering from electrons bound to donors in semiconductor quantum well structures

D. Wolverson, S. V. Railson, M. P. Halsall, J. J. Davies, D. E. Ashenford, B. Lunn

Research output: Contribution to journalArticle

Abstract

The spin-flip Raman scattering of electrons bound to donors in CdTe/Cd 1-xMnxTe multiple quantum well structures has been studied. The spin-flip energies are influenced strongly by the competing potentials of the quantum wells and of the donor ion. As a result, the spin-flip energy is a function of the donor position relative to the well centre. Because of resonance effects, the Raman spectra are sensitive to the laser photon energy and the results demonstrate a correlation between the binding energy of the electron to the donor (which determines the Raman shift) and the localization energy of an exciton at the neutral donor (which determines the energy of the Raman resonance). Studies of a structure containing two coupled quantum wells reveal similar effects and lend further support to the model.

Original languageEnglish
Article number008
Pages (from-to)1475-1483
Number of pages9
JournalSemiconductor Science and Technology
Volume10
Issue number11
DOIs
Publication statusPublished - 1 Dec 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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