Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

Mohammed Zeghouane; Gabin Grégoire; Emmanuel Chereau; Geoffrey Avit; Philipp Staudinger; Kirsten E. Moselund; Heinz Schmid; Pierre Marie Coulon; Philip Shields; Nebile Isik Goktas; Ray R. LaPierre; Agnès Trassoudaine; Yamina André; Evelyne Gil

doi:10.1021/acs.cgd.2c01105

Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

Mohammed Zeghouane, Gabin Grégoire, Emmanuel Chereau, Geoffrey Avit, Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid, Pierre Marie Coulon, Philip Shields, Nebile Isik Goktas, Ray R. LaPierre, Agnès Trassoudaine, Yamina André, Evelyne Gil

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Abstract

In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and microplatelets directly on a patterned SiO₂/Si(111) substrate by hydride vapor-phase epitaxy (HVPE). Direct condensation of GaAs on Si was achieved through a critical surface preparation under an As-controlled atmosphere. GaAs NWs were grown along the ⟨111⟩_B direction with a hexagonal cross section when the hole opening diameter (D) in the SiO₂ mask was below 350 nm. Larger apertures (D ≥ 500 nm) resulted in uniform microplatelets. This study highlights the capability of HVPE for selective area growth of GaAs directly on Si and thus the potential of HVPE as a generic heterointegration process for III-V semiconductors on silicon.

Original language	English
Pages (from-to)	2120-2127
Number of pages	8
Journal	Crystal Growth and Design
Volume	23
Issue number	4
Early online date	21 Mar 2023
DOIs	https://doi.org/10.1021/acs.cgd.2c01105
Publication status	Published - 5 Apr 2023

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1021/acs.cgd.2c01105

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Zeghouane, M., Grégoire, G., Chereau, E., Avit, G., Staudinger, P., Moselund, K. E., Schmid, H., Coulon, P. M., Shields, P., Isik Goktas, N., LaPierre, R. R., Trassoudaine, A., André, Y., & Gil, E. (2023). Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy. Crystal Growth and Design, 23(4), 2120-2127. https://doi.org/10.1021/acs.cgd.2c01105

Zeghouane, M, Grégoire, G, Chereau, E, Avit, G, Staudinger, P, Moselund, KE, Schmid, H, Coulon, PM, Shields, P, Isik Goktas, N, LaPierre, RR, Trassoudaine, A, André, Y & Gil, E 2023, 'Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy', Crystal Growth and Design, vol. 23, no. 4, pp. 2120-2127. https://doi.org/10.1021/acs.cgd.2c01105

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title = "Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy",

abstract = "In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and microplatelets directly on a patterned SiO2/Si(111) substrate by hydride vapor-phase epitaxy (HVPE). Direct condensation of GaAs on Si was achieved through a critical surface preparation under an As-controlled atmosphere. GaAs NWs were grown along the ⟨111⟩B direction with a hexagonal cross section when the hole opening diameter (D) in the SiO2 mask was below 350 nm. Larger apertures (D ≥ 500 nm) resulted in uniform microplatelets. This study highlights the capability of HVPE for selective area growth of GaAs directly on Si and thus the potential of HVPE as a generic heterointegration process for III-V semiconductors on silicon.",

author = "Mohammed Zeghouane and Gabin Gr{\'e}goire and Emmanuel Chereau and Geoffrey Avit and Philipp Staudinger and Moselund, {Kirsten E.} and Heinz Schmid and Coulon, {Pierre Marie} and Philip Shields and {Isik Goktas}, Nebile and LaPierre, {Ray R.} and Agn{\`e}s Trassoudaine and Yamina Andr{\'e} and Evelyne Gil",

note = "Funding Information: The research leading to these results has received funding from the European Research Council under grant agreement N° ENUF 790448. This work has also been financially supported by the CPER MMASYF of Region Auvergne-Rhone Alpes, which the authors acknowledge gratefully. It was also funded by: R{\'e}gion Auvergne Rh{\^o}ne-Alpes. Pack ambition recherche; Convention n°17 011236 01-61617; and R{\'e}gion Auvergne Rh{\^o}ne-Alpes. Pack ambition recherche international DRV_PIP_2021-252_IP_NANOSPRING, the program “Investissements d{\textquoteright}avenir” of the French ANR agency, the French government IDEX-SITE initiative 16-μIDEX-0001 (CAP20-25); the European Commission (Auvergne FEDER Funds), and the Region Auvergne in the framework of the LabExIMobS3 (ANR-10-LABX-16-01) and CPER. Electron microscopy was performed at the Canadian Centre for Electron Microscopy and supported by the Natural Sciences and Engineering Research Council of Canada. ",

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doi = "10.1021/acs.cgd.2c01105",

language = "English",

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AU - Zeghouane, Mohammed

AU - Grégoire, Gabin

AU - Chereau, Emmanuel

AU - Avit, Geoffrey

AU - Staudinger, Philipp

AU - Moselund, Kirsten E.

AU - Schmid, Heinz

AU - Coulon, Pierre Marie

AU - Shields, Philip

AU - Isik Goktas, Nebile

AU - LaPierre, Ray R.

AU - Trassoudaine, Agnès

AU - André, Yamina

AU - Gil, Evelyne

N1 - Funding Information: The research leading to these results has received funding from the European Research Council under grant agreement N° ENUF 790448. This work has also been financially supported by the CPER MMASYF of Region Auvergne-Rhone Alpes, which the authors acknowledge gratefully. It was also funded by: Région Auvergne Rhône-Alpes. Pack ambition recherche; Convention n°17 011236 01-61617; and Région Auvergne Rhône-Alpes. Pack ambition recherche international DRV_PIP_2021-252_IP_NANOSPRING, the program “Investissements d’avenir” of the French ANR agency, the French government IDEX-SITE initiative 16-μIDEX-0001 (CAP20-25); the European Commission (Auvergne FEDER Funds), and the Region Auvergne in the framework of the LabExIMobS3 (ANR-10-LABX-16-01) and CPER. Electron microscopy was performed at the Canadian Centre for Electron Microscopy and supported by the Natural Sciences and Engineering Research Council of Canada.

PY - 2023/4/5

Y1 - 2023/4/5

N2 - In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and microplatelets directly on a patterned SiO2/Si(111) substrate by hydride vapor-phase epitaxy (HVPE). Direct condensation of GaAs on Si was achieved through a critical surface preparation under an As-controlled atmosphere. GaAs NWs were grown along the ⟨111⟩B direction with a hexagonal cross section when the hole opening diameter (D) in the SiO2 mask was below 350 nm. Larger apertures (D ≥ 500 nm) resulted in uniform microplatelets. This study highlights the capability of HVPE for selective area growth of GaAs directly on Si and thus the potential of HVPE as a generic heterointegration process for III-V semiconductors on silicon.

AB - In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and microplatelets directly on a patterned SiO2/Si(111) substrate by hydride vapor-phase epitaxy (HVPE). Direct condensation of GaAs on Si was achieved through a critical surface preparation under an As-controlled atmosphere. GaAs NWs were grown along the ⟨111⟩B direction with a hexagonal cross section when the hole opening diameter (D) in the SiO2 mask was below 350 nm. Larger apertures (D ≥ 500 nm) resulted in uniform microplatelets. This study highlights the capability of HVPE for selective area growth of GaAs directly on Si and thus the potential of HVPE as a generic heterointegration process for III-V semiconductors on silicon.

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ER -

Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

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