Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties

Pierre Marie Coulon, Blandine Alloing, Virginie Brändli, Denis Lefebvre, Sébastien Chenot, Jesús Zúñiga-Pérez

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Site-controlled growth of GaN nanowires (NWs) on GaN-on-sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous-flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga-polar substrates. The lateral growth rate, that is, perpendicular to the c-axis, could be further controlled using appropriate growth temperatures and H2/N2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.

Original languageEnglish
Pages (from-to)1096-1103
Number of pages8
JournalPhysica Status Solidi (B) Basic Research
Volume252
Issue number5
Early online date12 Jan 2015
DOIs
Publication statusPublished - 1 May 2015

Keywords

  • GaN
  • MOVPE
  • Nanowires
  • Selective area growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties'. Together they form a unique fingerprint.

Cite this