Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

C. Trager-Cowan; A. Alasmari; W. Avis; J. Bruckbauer; P. R. Edwards; B. Hourahine; S. Kraeusel; G. Kusch; R. Johnston; G. Naresh-Kumar; R. W. Martin; M. Nouf-Allehiani; E. Pascal; L. Spasevski; David Thomson; S. Vespucci; P. J. Parbrook; M. D. Smith; J. Enslin; F. Mehnke; M. Kneissl; C. Kuhn; T. Wernicke; S. Hagedorn; A. Knauer; V. Kueller; S. Walde; M. Weyers; P. M. Coulon; P. A. Shields; Y. Zhang; L. Jiu; Y. Gong; R. M. Smith; T. Wang; A. Winkelmann

doi:10.1364/PRJ.7.000B73

Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, David Thomson, S. Vespucci, P. J. Parbrook, M. D. Smith, J. Enslin, F. MehnkeM. Kneissl, C. Kuhn, T. Wernicke, S. Hagedorn, A. Knauer, V. Kueller, S. Walde, M. Weyers, P. M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Y. Gong, R. M. Smith, T. Wang, A. Winkelmann

Research output: Contribution to journal › Article › peer-review

9 Citations (SciVal)

Abstract

In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.

Original language	English
Pages (from-to)	B73-B82
Number of pages	10
Journal	Photonics Research
Volume	7
Issue number	11
Early online date	11 Sept 2019
DOIs	https://doi.org/10.1364/PRJ.7.000B73
Publication status	Published - 30 Oct 2019

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1364/PRJ.7.000B73Licence: CC BY

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Trager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kraeusel, S., Kusch, G., Johnston, R., Naresh-Kumar, G., Martin, R. W., Nouf-Allehiani, M., Pascal, E., Spasevski, L., Thomson, D., Vespucci, S., Parbrook, P. J., Smith, M. D., Enslin, J., ... Winkelmann, A. (2019). Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. Photonics Research, 7(11), B73-B82. https://doi.org/10.1364/PRJ.7.000B73

Trager-Cowan, C, Alasmari, A, Avis, W, Bruckbauer, J, Edwards, PR, Hourahine, B, Kraeusel, S, Kusch, G, Johnston, R, Naresh-Kumar, G, Martin, RW, Nouf-Allehiani, M, Pascal, E, Spasevski, L, Thomson, D, Vespucci, S, Parbrook, PJ, Smith, MD, Enslin, J, Mehnke, F, Kneissl, M, Kuhn, C, Wernicke, T, Hagedorn, S, Knauer, A, Kueller, V, Walde, S, Weyers, M, Coulon, PM, Shields, PA, Zhang, Y, Jiu, L, Gong, Y, Smith, RM, Wang, T & Winkelmann, A 2019, 'Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films', Photonics Research, vol. 7, no. 11, pp. B73-B82. https://doi.org/10.1364/PRJ.7.000B73

@article{4ff887ad83924b2a96615df148cf2e69,

title = "Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films",

abstract = "In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.",

author = "C. Trager-Cowan and A. Alasmari and W. Avis and J. Bruckbauer and Edwards, {P. R.} and B. Hourahine and S. Kraeusel and G. Kusch and R. Johnston and G. Naresh-Kumar and Martin, {R. W.} and M. Nouf-Allehiani and E. Pascal and L. Spasevski and David Thomson and S. Vespucci and Parbrook, {P. J.} and Smith, {M. D.} and J. Enslin and F. Mehnke and M. Kneissl and C. Kuhn and T. Wernicke and S. Hagedorn and A. Knauer and V. Kueller and S. Walde and M. Weyers and Coulon, {P. M.} and Shields, {P. A.} and Y. Zhang and L. Jiu and Y. Gong and Smith, {R. M.} and T. Wang and A. Winkelmann",

year = "2019",

month = oct,

day = "30",

doi = "10.1364/PRJ.7.000B73",

language = "English",

volume = "7",

pages = "B73--B82",

journal = "Photonics Research",

issn = "2327-9125",

publisher = "OSA Publishing",

number = "11",

}

TY - JOUR

T1 - Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

AU - Trager-Cowan, C.

AU - Alasmari, A.

AU - Avis, W.

AU - Bruckbauer, J.

AU - Edwards, P. R.

AU - Hourahine, B.

AU - Kraeusel, S.

AU - Kusch, G.

AU - Johnston, R.

AU - Naresh-Kumar, G.

AU - Martin, R. W.

AU - Nouf-Allehiani, M.

AU - Pascal, E.

AU - Spasevski, L.

AU - Thomson, David

AU - Vespucci, S.

AU - Parbrook, P. J.

AU - Smith, M. D.

AU - Enslin, J.

AU - Mehnke, F.

AU - Kneissl, M.

AU - Kuhn, C.

AU - Wernicke, T.

AU - Hagedorn, S.

AU - Knauer, A.

AU - Kueller, V.

AU - Walde, S.

AU - Weyers, M.

AU - Coulon, P. M.

AU - Shields, P. A.

AU - Zhang, Y.

AU - Jiu, L.

AU - Gong, Y.

AU - Smith, R. M.

AU - Wang, T.

AU - Winkelmann, A.

PY - 2019/10/30

Y1 - 2019/10/30

N2 - In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.

AB - In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.

UR - http://www.scopus.com/inward/record.url?scp=85074723108&partnerID=8YFLogxK

U2 - 10.1364/PRJ.7.000B73

DO - 10.1364/PRJ.7.000B73

M3 - Article

AN - SCOPUS:85074723108

SN - 2327-9125

VL - 7

SP - B73-B82

JO - Photonics Research

JF - Photonics Research

IS - 11

ER -

Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

Abstract

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Manufacturing of Nano-Engineered III-N Semiconductors

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Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

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