Projects per year
Abstract
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.
Original language | English |
---|---|
Pages (from-to) | B73-B82 |
Number of pages | 10 |
Journal | Photonics Research |
Volume | 7 |
Issue number | 11 |
Early online date | 11 Sept 2019 |
DOIs | |
Publication status | Published - 30 Oct 2019 |
Funding
Acknowledgment. The authors would like to acknowledge financial support of the Engineering and Physical Sciences Research Council, UK via Grant No. EP/J015792/1, “Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC”; Grant No. EP/M015181/ 1, “Manufacturing nano-engineered III-nitrides”; and Grant No. EP/P015719/1, “Quantitative non-destructive nanoscale characterisation of advanced materials”. Work at Ferdinand-Braun-Institute and TU Berlin was partially supported by the German “Federal Ministry of Education and Research” (BMBF) within the “Advanced UV for Life” consortium and the “German Research Foundation” (DFG) within the “Collaborative Research Center 787”.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
Fingerprint
Dive into the research topics of 'Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films'. Together they form a unique fingerprint.Projects
- 2 Finished
-
Manufacturing of Nano-Engineered III-N Semiconductors
Shields, P. (PI), Allsopp, D. (CoI) & Wang, W. (CoI)
Engineering and Physical Sciences Research Council
1/05/15 → 30/09/21
Project: Research council
-
Manufacturing of Nano-Engineered III-N Semiconductors - Equipment
Shields, P. (PI) & Allsopp, D. (CoI)
Engineering and Physical Sciences Research Council
1/02/15 → 31/01/20
Project: Research council
Profiles
-
Philip Shields
- Department of Electronic & Electrical Engineering - Senior Lecturer
- Centre for Nanoscience and Nanotechnology
- Centre for Sustainable Chemical Technologies (CSCT)
- Condensed Matter Physics CDT
- Electronics Materials, Circuits & Systems Research Unit (EMaCS)
- Centre for Integrated Materials, Processes & Structures (IMPS)
Person: Research & Teaching, Core staff