Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H2 chemistry

Bulent Cakmak, Richard V. Penty, Ian H. White

Research output: Contribution to journalArticle

Abstract

This paper reports scanning electron (SEM) and atomic force microscopy (AFM) results of ion beam (IBE) and chemically assisted ion-beam etched (CAIBE) InP wafers. While Argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H2/CH4 or Ar/H2 gases only. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry and verified by atomic force microscopy measurements. The anisotropy of InP samples is also presented for two different masks; Al2O3 and Titanium (Ti) in the case of CAIBE mode. The most anisotropic structure of 83° is performed by using the Ti mask. Finally, by using atomic force microscopy technique the lowest rms roughness of 4.3 is found in the case of using only Ar/H2 gasses.

Original languageEnglish
Pages (from-to)306-313
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4451
DOIs
Publication statusPublished - 1 Jan 2001

Keywords

  • Atomic force microscopy
  • Chemically assisted ion beam etching
  • H/Ch chemistry
  • InP
  • Ion beam etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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