Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H2 chemistry

Bulent Cakmak; Richard V. Penty; Ian H. White

doi:10.1117/12.453629

Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H₂ chemistry

Bulent Cakmak, Richard V. Penty, Ian H. White

Vice Chancellor's Office

Elektronik Ve Haberlesme Bolumu

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports scanning electron (SEM) and atomic force microscopy (AFM) results of ion beam (IBE) and chemically assisted ion-beam etched (CAIBE) InP wafers. While Argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H₂/CH₄ or Ar/H₂ gases only. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (V_acc), discharge current (I_dis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H₂ chemistry and verified by atomic force microscopy measurements. The anisotropy of InP samples is also presented for two different masks; Al₂O₃ and Titanium (Ti) in the case of CAIBE mode. The most anisotropic structure of 83° is performed by using the Ti mask. Finally, by using atomic force microscopy technique the lowest rms roughness of 4.3 is found in the case of using only Ar/H₂ gasses.

Original language	English
Pages (from-to)	306-313
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4451
DOIs	https://doi.org/10.1117/12.453629
Publication status	Published - 1 Jan 2001

Keywords

Atomic force microscopy
Chemically assisted ion beam etching
H/Ch chemistry
InP
Ion beam etching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.453629

Cite this

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title = "Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H2 chemistry",

abstract = "This paper reports scanning electron (SEM) and atomic force microscopy (AFM) results of ion beam (IBE) and chemically assisted ion-beam etched (CAIBE) InP wafers. While Argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H2/CH4 or Ar/H2 gases only. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry and verified by atomic force microscopy measurements. The anisotropy of InP samples is also presented for two different masks; Al2O3 and Titanium (Ti) in the case of CAIBE mode. The most anisotropic structure of 83° is performed by using the Ti mask. Finally, by using atomic force microscopy technique the lowest rms roughness of 4.3 is found in the case of using only Ar/H2 gasses.",

keywords = "Atomic force microscopy, Chemically assisted ion beam etching, H/Ch chemistry, InP, Ion beam etching",

author = "Bulent Cakmak and Penty, {Richard V.} and White, {Ian H.}",

year = "2001",

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doi = "10.1117/12.453629",

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T1 - Scanning electron and atomic force microscopy measurements of ion beam etched InP samples using Ar/H2 chemistry

AU - Cakmak, Bulent

AU - Penty, Richard V.

AU - White, Ian H.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - This paper reports scanning electron (SEM) and atomic force microscopy (AFM) results of ion beam (IBE) and chemically assisted ion-beam etched (CAIBE) InP wafers. While Argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H2/CH4 or Ar/H2 gases only. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry and verified by atomic force microscopy measurements. The anisotropy of InP samples is also presented for two different masks; Al2O3 and Titanium (Ti) in the case of CAIBE mode. The most anisotropic structure of 83° is performed by using the Ti mask. Finally, by using atomic force microscopy technique the lowest rms roughness of 4.3 is found in the case of using only Ar/H2 gasses.

AB - This paper reports scanning electron (SEM) and atomic force microscopy (AFM) results of ion beam (IBE) and chemically assisted ion-beam etched (CAIBE) InP wafers. While Argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H2/CH4 or Ar/H2 gases only. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry and verified by atomic force microscopy measurements. The anisotropy of InP samples is also presented for two different masks; Al2O3 and Titanium (Ti) in the case of CAIBE mode. The most anisotropic structure of 83° is performed by using the Ti mask. Finally, by using atomic force microscopy technique the lowest rms roughness of 4.3 is found in the case of using only Ar/H2 gasses.

KW - Atomic force microscopy

KW - Chemically assisted ion beam etching

KW - H/Ch chemistry

KW - InP

KW - Ion beam etching

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