Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity

Y. Zhou; P. A. Snow; P. St. J. Russell

doi:10.1016/S0921-5107(00)00688-7

Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity

Y. Zhou
, P. A. Snow
, P. St. J. Russell

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (SciVal)

Abstract

A multilayer microcavity was electrochemically etched on a silicon substrate and doped with erbium. Thermal processing under a nitrogen atmosphere optically activated the erbium-ions. Photo-pumping yielded room temperature emission around 1.54 μm from the erbium-doped samples with the emitted light strongly modified by the microcavity structure. Emission spectra with a peak at 1.536 μm had a full width at half maximum of ∼6 nm.

Original language	English
Pages (from-to)	40-42
Number of pages	3
Journal	Materials Science and Engineering : B
Volume	81
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00688-7
Publication status	Published - 24 Apr 2001

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ID number: ISI:000168392800010

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10.1016/S0921-5107(00)00688-7

http://dx.doi.org/10.1016/S0921-5107(00)00688-7

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title = "Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity",

abstract = "A multilayer microcavity was electrochemically etched on a silicon substrate and doped with erbium. Thermal processing under a nitrogen atmosphere optically activated the erbium-ions. Photo-pumping yielded room temperature emission around 1.54 μm from the erbium-doped samples with the emitted light strongly modified by the microcavity structure. Emission spectra with a peak at 1.536 μm had a full width at half maximum of ∼6 nm.",

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AU - Snow, P. A.

AU - Russell, P. St. J.

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PY - 2001/4/24

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N2 - A multilayer microcavity was electrochemically etched on a silicon substrate and doped with erbium. Thermal processing under a nitrogen atmosphere optically activated the erbium-ions. Photo-pumping yielded room temperature emission around 1.54 μm from the erbium-doped samples with the emitted light strongly modified by the microcavity structure. Emission spectra with a peak at 1.536 μm had a full width at half maximum of ∼6 nm.

AB - A multilayer microcavity was electrochemically etched on a silicon substrate and doped with erbium. Thermal processing under a nitrogen atmosphere optically activated the erbium-ions. Photo-pumping yielded room temperature emission around 1.54 μm from the erbium-doped samples with the emitted light strongly modified by the microcavity structure. Emission spectra with a peak at 1.536 μm had a full width at half maximum of ∼6 nm.

UR - http://dx.doi.org/10.1016/S0921-5107(00)00688-7

U2 - 10.1016/S0921-5107(00)00688-7

DO - 10.1016/S0921-5107(00)00688-7

M3 - Article

SN - 0921-5107

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JO - Materials Science and Engineering : B

JF - Materials Science and Engineering : B

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ER -

Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity

Abstract

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