Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si

R M Gwilliam, A P Knights, C P Burrows, P G Coleman

Research output: Contribution to journal › Article › peer-review

2 Citations (SciVal)

Original language	English
Pages (from-to)	427-430
Number of pages	4
Journal	Journal of Vacuum Science & Technology B
Volume	20 Jan-Feb
Issue number	1
Publication status	Published - 2002

ID number: ISI:000173985500080

Cite this

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title = "Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si",

author = "Gwilliam, {R M} and Knights, {A P} and Burrows, {C P} and Coleman, {P G}",

note = "ID number: ISI:000173985500080",

year = "2002",

language = "English",

volume = "20 Jan-Feb",

pages = "427--430",

journal = "Journal of Vacuum Science & Technology B",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si

AU - Gwilliam, R M

AU - Knights, A P

AU - Burrows, C P

AU - Coleman, P G

N1 - ID number: ISI:000173985500080

PY - 2002

Y1 - 2002

M3 - Article

SN - 1071-1023

VL - 20 Jan-Feb

SP - 427

EP - 430

JO - Journal of Vacuum Science & Technology B

JF - Journal of Vacuum Science & Technology B

IS - 1

ER -