Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si

R M Gwilliam, A P Knights, C P Burrows, P G Coleman

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)427-430
Number of pages4
JournalJournal of Vacuum Science & Technology B
Volume20 Jan-Feb
Issue number1
Publication statusPublished - 2002

Cite this

Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si. / Gwilliam, R M; Knights, A P; Burrows, C P; Coleman, P G.

In: Journal of Vacuum Science & Technology B, Vol. 20 Jan-Feb, No. 1, 2002, p. 427-430.

Research output: Contribution to journalArticle

Gwilliam, R M ; Knights, A P ; Burrows, C P ; Coleman, P G. / Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si. In: Journal of Vacuum Science & Technology B. 2002 ; Vol. 20 Jan-Feb, No. 1. pp. 427-430.
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