Rocking disc electro-deposition of CuIn alloys, selenisation, and pinhole effect minimisation in CISe solar absorber layers

C.Y. Cummings, G. Zoppi, I. Forbes, D. Colombara, L.M. Peter, F. Marken

Research output: Contribution to journalArticle

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Abstract

The co-electrodeposition of copper and indium from a pH 3 tartrate bath onto 4.8 cm × 2.5 cm Mo and MoSe 2 substrates is studied and conditions are optimised for CuIn alloy films. Selenisation at ca. 500 °C for 30 min in selenium vapour gives CuInSe 2 (or CISe). Mapping using the photo-electrochemical reduction of Eu(NO 3) 3 is used to asses the relative photoactivity as a function of position and surface treatment. Etching of detrimental Cu x Se phases is investigated with 5% and 0.5% (w/w) aqueous KCN. The slower 0.5% (w/w) KCN etch allows better process control, and re-annealing at 500 °C for 30 min followed by further etching significantly improved the photo-activity. However, over the large area local pinhole recombination effects are substantial. An alternative low temperature film optimisation method is proposed based on (i) KCN over-etch, (ii) hypochlorite (5%, w/w) pinhole removal (Mo etch), and (iii) a final KCN etch to give good and more uniform activity.
LanguageEnglish
Pages141-147
JournalElectrochimica Acta
Volume79
DOIs
StatusPublished - 2012

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Solar absorbers
Electrodeposition
Etching
Hypochlorous Acid
Indium
Selenium
Process control
Surface treatment
Copper
Vapors
Annealing
Substrates
Temperature

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Rocking disc electro-deposition of CuIn alloys, selenisation, and pinhole effect minimisation in CISe solar absorber layers. / Cummings, C.Y.; Zoppi, G.; Forbes, I.; Colombara, D.; Peter, L.M.; Marken, F.

In: Electrochimica Acta, Vol. 79, 2012, p. 141-147.

Research output: Contribution to journalArticle

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