Abstract
This paper presents the experimental and theoretical characterisation of arrays of tapered super-luminescent diodes to achieve very high, broad-band, ripple-free optical output. These arrays were fabricated from 980-nm high-power triple-quantumwell
InGaAs–AlGaAs double heterostructures. Output powers of 2.7 W pulsed and of 280-mW quasi-CW were obtained from antireflection-
coated arrays, with 10% maximum wall-plug efficiency per pulse at 0.75-W pulsed output power. Experimental and theoretical results for the optical-electrical characteristics and the near and far-field radiation characteristics of the arrays are discussed
and compared with those of corresponding individual super-luminescent diodes.
Original language | English |
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Pages (from-to) | 1055-1059 |
Number of pages | 5 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 43 |
Issue number | 11-12 |
Early online date | 15 Oct 2007 |
DOIs | |
Publication status | Published - Nov 2007 |
Keywords
- High-power
- Near and far fields
- Super-luminescent diodes
- Ripple-free spectrum
- Arrays