Rhenium dichalcogenides

layered semiconductors with two vertical orientations

Lewis Hart, Sara Dale, Sarah Hoye, James L. Webb, Daniel Wolverson

Research output: Contribution to journalArticle

43 Citations (Scopus)
55 Downloads (Pure)

Abstract

The rhenium and technetium diselenides and disulfides are van der Waals layered semiconductors in some respects similar to more well-known transition metal dichalcogenides (TMD) such as molybdenum sulfide. However, their symmetry is lower, consisting only of an inversion center, so that turning a layer upside-down (that is, applying a C2 rotation about an in-plane axis) is not a symmetry operation, but reverses the sign of the angle between the two nonequivalent in-plane crystallographic axes. A given layer thus can be placed on a substrate in two symmetrically nonequivalent (but energetically similar) ways. This has consequences for the exploitation of the anisotropic properties of these materials in TMD heterostructures and is expected to lead to a new source of domain structure in large-area layer growth. We produced few layer ReS2 and ReSe2 samples with controlled “up” or “down” orientations by micromechanical cleavage and we show how polarized Raman microscopy can be used to distinguish these two orientations, thus establishing Raman as an essential tool for the characterization of large-area layers.
Original languageEnglish
Pages (from-to)1381-1386
Number of pages6
JournalNano Letters
Volume16
Issue number2
Early online date22 Jan 2016
DOIs
Publication statusPublished - 10 Feb 2016

Fingerprint

vertical orientation
Rhenium
Technetium
rhenium
Crystal orientation
Disulfides
Molybdenum
Heterojunctions
Microscopic examination
Substrates
molybdenum sulfides
technetium
disulfides
symmetry
exploitation
cleavage
rhenium sulfide
Layered semiconductors
molybdenum disulfide
Sulfides

Keywords

  • rhenium diselenide, rhenium disulfide, ReSe2, ReS2, MoS2, transition metal dichalcogenide, phonon, Raman spectroscopy, asymmetry

Cite this

Rhenium dichalcogenides : layered semiconductors with two vertical orientations. / Hart, Lewis; Dale, Sara; Hoye, Sarah; Webb, James L.; Wolverson, Daniel.

In: Nano Letters, Vol. 16, No. 2, 10.02.2016, p. 1381-1386.

Research output: Contribution to journalArticle

Hart, Lewis ; Dale, Sara ; Hoye, Sarah ; Webb, James L. ; Wolverson, Daniel. / Rhenium dichalcogenides : layered semiconductors with two vertical orientations. In: Nano Letters. 2016 ; Vol. 16, No. 2. pp. 1381-1386.
@article{7ef5ca37068040b58c02c547140f9cbf,
title = "Rhenium dichalcogenides: layered semiconductors with two vertical orientations",
abstract = "The rhenium and technetium diselenides and disulfides are van der Waals layered semiconductors in some respects similar to more well-known transition metal dichalcogenides (TMD) such as molybdenum sulfide. However, their symmetry is lower, consisting only of an inversion center, so that turning a layer upside-down (that is, applying a C2 rotation about an in-plane axis) is not a symmetry operation, but reverses the sign of the angle between the two nonequivalent in-plane crystallographic axes. A given layer thus can be placed on a substrate in two symmetrically nonequivalent (but energetically similar) ways. This has consequences for the exploitation of the anisotropic properties of these materials in TMD heterostructures and is expected to lead to a new source of domain structure in large-area layer growth. We produced few layer ReS2 and ReSe2 samples with controlled “up” or “down” orientations by micromechanical cleavage and we show how polarized Raman microscopy can be used to distinguish these two orientations, thus establishing Raman as an essential tool for the characterization of large-area layers.",
keywords = "rhenium diselenide, rhenium disulfide, ReSe2, ReS2, MoS2, transition metal dichalcogenide, phonon, Raman spectroscopy, asymmetry",
author = "Lewis Hart and Sara Dale and Sarah Hoye and Webb, {James L.} and Daniel Wolverson",
year = "2016",
month = "2",
day = "10",
doi = "10.1021/acs.nanolett.5b04838",
language = "English",
volume = "16",
pages = "1381--1386",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "2",

}

TY - JOUR

T1 - Rhenium dichalcogenides

T2 - layered semiconductors with two vertical orientations

AU - Hart, Lewis

AU - Dale, Sara

AU - Hoye, Sarah

AU - Webb, James L.

AU - Wolverson, Daniel

PY - 2016/2/10

Y1 - 2016/2/10

N2 - The rhenium and technetium diselenides and disulfides are van der Waals layered semiconductors in some respects similar to more well-known transition metal dichalcogenides (TMD) such as molybdenum sulfide. However, their symmetry is lower, consisting only of an inversion center, so that turning a layer upside-down (that is, applying a C2 rotation about an in-plane axis) is not a symmetry operation, but reverses the sign of the angle between the two nonequivalent in-plane crystallographic axes. A given layer thus can be placed on a substrate in two symmetrically nonequivalent (but energetically similar) ways. This has consequences for the exploitation of the anisotropic properties of these materials in TMD heterostructures and is expected to lead to a new source of domain structure in large-area layer growth. We produced few layer ReS2 and ReSe2 samples with controlled “up” or “down” orientations by micromechanical cleavage and we show how polarized Raman microscopy can be used to distinguish these two orientations, thus establishing Raman as an essential tool for the characterization of large-area layers.

AB - The rhenium and technetium diselenides and disulfides are van der Waals layered semiconductors in some respects similar to more well-known transition metal dichalcogenides (TMD) such as molybdenum sulfide. However, their symmetry is lower, consisting only of an inversion center, so that turning a layer upside-down (that is, applying a C2 rotation about an in-plane axis) is not a symmetry operation, but reverses the sign of the angle between the two nonequivalent in-plane crystallographic axes. A given layer thus can be placed on a substrate in two symmetrically nonequivalent (but energetically similar) ways. This has consequences for the exploitation of the anisotropic properties of these materials in TMD heterostructures and is expected to lead to a new source of domain structure in large-area layer growth. We produced few layer ReS2 and ReSe2 samples with controlled “up” or “down” orientations by micromechanical cleavage and we show how polarized Raman microscopy can be used to distinguish these two orientations, thus establishing Raman as an essential tool for the characterization of large-area layers.

KW - rhenium diselenide, rhenium disulfide, ReSe2, ReS2, MoS2, transition metal dichalcogenide, phonon, Raman spectroscopy, asymmetry

U2 - 10.1021/acs.nanolett.5b04838

DO - 10.1021/acs.nanolett.5b04838

M3 - Article

VL - 16

SP - 1381

EP - 1386

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 2

ER -