Resonant tunneling in partially disordered silicon nanostructures

L Tsybeskov, G F Grom, R Krishnan, L Montes, P M Fauchet, D Kovalev, J Diener, V Timoshenko, F Koch, J P McCaffrey, J M Baribeau, G I Sproule, D J Lockwood, Y M Niquet, C Delerue, G Allan

Research output: Contribution to journalArticle

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Abstract

Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current ( ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.
Original languageEnglish
Pages (from-to)552-558
Number of pages7
JournalEPL (Europhysics Letters)
Volume55
Issue number4
Publication statusPublished - 2001

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resonant tunneling
conductivity
nanocrystals
silicon
self oscillation
alternating current
valence
magnetic fields

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Tsybeskov, L., Grom, G. F., Krishnan, R., Montes, L., Fauchet, P. M., Kovalev, D., ... Allan, G. (2001). Resonant tunneling in partially disordered silicon nanostructures. EPL (Europhysics Letters), 55(4), 552-558.

Resonant tunneling in partially disordered silicon nanostructures. / Tsybeskov, L; Grom, G F; Krishnan, R; Montes, L; Fauchet, P M; Kovalev, D; Diener, J; Timoshenko, V; Koch, F; McCaffrey, J P; Baribeau, J M; Sproule, G I; Lockwood, D J; Niquet, Y M; Delerue, C; Allan, G.

In: EPL (Europhysics Letters), Vol. 55, No. 4, 2001, p. 552-558.

Research output: Contribution to journalArticle

Tsybeskov, L, Grom, GF, Krishnan, R, Montes, L, Fauchet, PM, Kovalev, D, Diener, J, Timoshenko, V, Koch, F, McCaffrey, JP, Baribeau, JM, Sproule, GI, Lockwood, DJ, Niquet, YM, Delerue, C & Allan, G 2001, 'Resonant tunneling in partially disordered silicon nanostructures', EPL (Europhysics Letters), vol. 55, no. 4, pp. 552-558.
Tsybeskov L, Grom GF, Krishnan R, Montes L, Fauchet PM, Kovalev D et al. Resonant tunneling in partially disordered silicon nanostructures. EPL (Europhysics Letters). 2001;55(4):552-558.
Tsybeskov, L ; Grom, G F ; Krishnan, R ; Montes, L ; Fauchet, P M ; Kovalev, D ; Diener, J ; Timoshenko, V ; Koch, F ; McCaffrey, J P ; Baribeau, J M ; Sproule, G I ; Lockwood, D J ; Niquet, Y M ; Delerue, C ; Allan, G. / Resonant tunneling in partially disordered silicon nanostructures. In: EPL (Europhysics Letters). 2001 ; Vol. 55, No. 4. pp. 552-558.
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AU - Grom, G F

AU - Krishnan, R

AU - Montes, L

AU - Fauchet, P M

AU - Kovalev, D

AU - Diener, J

AU - Timoshenko, V

AU - Koch, F

AU - McCaffrey, J P

AU - Baribeau, J M

AU - Sproule, G I

AU - Lockwood, D J

AU - Niquet, Y M

AU - Delerue, C

AU - Allan, G

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AB - Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current ( ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

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