Resonant tunneling in partially disordered silicon nanostructures

L Tsybeskov; G F Grom; R Krishnan; L Montes; P M Fauchet; D Kovalev; J Diener; V Timoshenko; F Koch; J P McCaffrey; J M Baribeau; G I Sproule; D J Lockwood; Y M Niquet; C Delerue; G Allan

Resonant tunneling in partially disordered silicon nanostructures

L Tsybeskov, G F Grom, R Krishnan, L Montes, P M Fauchet, D Kovalev, J Diener, V Timoshenko, F Koch, J P McCaffrey, J M Baribeau, G I Sproule, D J Lockwood, Y M Niquet, C Delerue, G Allan

Department of Physics

Research output: Contribution to journal › Article › peer-review

40 Citations (SciVal)

Abstract

Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current ( ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

Original language	English
Pages (from-to)	552-558
Number of pages	7
Journal	EPL (Europhysics Letters)
Volume	55
Issue number	4
Publication status	Published - 2001

Bibliographical note

ID number: ISI:000170394900016

Cite this

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title = "Resonant tunneling in partially disordered silicon nanostructures",

abstract = "Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current ( ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.",

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year = "2001",

language = "English",

volume = "55",

pages = "552--558",

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T1 - Resonant tunneling in partially disordered silicon nanostructures

AU - Tsybeskov, L

AU - Grom, G F

AU - Krishnan, R

AU - Montes, L

AU - Fauchet, P M

AU - Kovalev, D

AU - Diener, J

AU - Timoshenko, V

AU - Koch, F

AU - McCaffrey, J P

AU - Baribeau, J M

AU - Sproule, G I

AU - Lockwood, D J

AU - Niquet, Y M

AU - Delerue, C

AU - Allan, G

N1 - ID number: ISI:000170394900016

PY - 2001

Y1 - 2001

N2 - Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current ( ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

AB - Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current ( ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.

M3 - Article

SN - 0295-5075

VL - 55

SP - 552

EP - 558

JO - EPL (Europhysics Letters)

JF - EPL (Europhysics Letters)

IS - 4

ER -

Resonant tunneling in partially disordered silicon nanostructures

Abstract

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