Resonant tunneling in partially disordered silicon nanostructures

L Tsybeskov, G F Grom, R Krishnan, L Montes, P M Fauchet, D Kovalev, J Diener, V Timoshenko, F Koch, J P McCaffrey, J M Baribeau, G I Sproule, D J Lockwood, Y M Niquet, C Delerue, G Allan

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Low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity. An unusual alternating current ( ac) conductivity dependence on frequency and low magnetic field, negative differential conductivity, reproducible N-shaped switching and self-oscillations were observed consistently. The modeled conductivity mechanism is associated with resonant hole tunneling via quantized valence band states of Si nanocrystals. Tight-binding calculations of the quantum confinement effect for different Si nanocrystal sizes and shapes strongly support the tunneling model.
Original languageEnglish
Pages (from-to)552-558
Number of pages7
JournalEPL (Europhysics Letters)
Issue number4
Publication statusPublished - 2001


Cite this

Tsybeskov, L., Grom, G. F., Krishnan, R., Montes, L., Fauchet, P. M., Kovalev, D., ... Allan, G. (2001). Resonant tunneling in partially disordered silicon nanostructures. EPL (Europhysics Letters), 55(4), 552-558.