Resonant spin-flip Raman scattering studies of II-VI semiconductor heterostructures

O. Z. Karimov, D. Wolverson, J. J. Davies, T. Ruf, L. N. Tenishev

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7 Citations (SciVal)


Spin-flip Raman scattering (SFRS) has been applied to the investigation of a range of wide band-gap II-VI heterostructures. In the ternary alloys ZnSxSe1-x and Zn1-xMgxSe, we have studied the dependence of the conduction band gyromagnetic ratio on composition and find that the data are described well by the predictions of five-band k · p theory: we have made similar predictions for the alloy system Zn1-xCdxSe. In the latter system, the fractional monolayer (FM) deposition of CdSe on ZnSe has made possible the formation of an inhomogeneous Zn1-xCdxSe alloy layer. We have studied SFRS in one such structure in resonance with excitons localized at the CdSe FM and have obtained a value for the electron gyromagnetic ratio which is equal to that of bulk ZnSe. We also obtain an estimate of a zero-field electron-hole exchange splitting of the exciton states of 0.68 meV which is 2.8 (5.2) times larger than that observed for bulk ZnSe (CdSe).

Original languageEnglish
Pages (from-to)373-378
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Issue number1
Publication statusPublished - Sept 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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