TY - JOUR
T1 - Resonant Raman scattering of ZnSxSe1-x solid solutions
T2 - role of S and Se electronic states
AU - Dimitrievska, M.
AU - Xie, H.
AU - Jackson, A. J.
AU - Fontané, X.
AU - Espindola-Rodriguez, M.
AU - Saucedo, E.
AU - Perez-Rodriguez, A.
AU - Walsh, A.
AU - Izquierdo-Roca, V.
PY - 2016/3/21
Y1 - 2016/3/21
N2 - A comprehensive Raman resonance scattering study of ZnSxSe1-x (ZnSSe) solid solutions over the whole compositional range (0 ≤ x ≤ 1) has been made using 325 and 455 nm excitation wavelengths. The Raman scattering intensities of the LO ZnS-like and ZnSe-like phonon modes, corresponding to pure S and Se vibrations, respectively, are revealed to be significantly enhanced when excited with 325 nm excitation in the case of S vibrations, and with 455 nm in the case of the Se vibrations. This behavior is explained with the interaction of the excitation photons with the corresponding S or Se electronic states in the conduction band, and further confirmed with first principle simulations. These findings advance the fundamental understanding of the coupling between the electronic transitions and photons in the case of Raman resonance effects, and provide inputs for further studies of lattice dynamics, especially in the case of chalcogenide materials. Additionally, the coexistence of modes corresponding to only S vibrations and only Se vibrations in the ZnSSe alloys makes these results applicable for the compositional assessment of ZnSSe compounds.
AB - A comprehensive Raman resonance scattering study of ZnSxSe1-x (ZnSSe) solid solutions over the whole compositional range (0 ≤ x ≤ 1) has been made using 325 and 455 nm excitation wavelengths. The Raman scattering intensities of the LO ZnS-like and ZnSe-like phonon modes, corresponding to pure S and Se vibrations, respectively, are revealed to be significantly enhanced when excited with 325 nm excitation in the case of S vibrations, and with 455 nm in the case of the Se vibrations. This behavior is explained with the interaction of the excitation photons with the corresponding S or Se electronic states in the conduction band, and further confirmed with first principle simulations. These findings advance the fundamental understanding of the coupling between the electronic transitions and photons in the case of Raman resonance effects, and provide inputs for further studies of lattice dynamics, especially in the case of chalcogenide materials. Additionally, the coexistence of modes corresponding to only S vibrations and only Se vibrations in the ZnSSe alloys makes these results applicable for the compositional assessment of ZnSSe compounds.
UR - http://dx.doi.org/10.1039/C5CP04498G
U2 - 10.1039/C5CP04498G
DO - 10.1039/C5CP04498G
M3 - Article
SN - 1463-9076
VL - 18
SP - 7632
EP - 7640
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
IS - 11
ER -