Resonant magnetotunneling through individual self-assembled InAs quantum dots

A Thornton; IE Itskevich; Thomas Ihn; M Henini; P. Moriarty; Alain Nogaret; PH Beton; L Eaves; pc main; J Middleton; M Heath

doi:10.1006/spmi.1996.0192

Resonant magnetotunneling through individual self-assembled InAs quantum dots

A Thornton, IE Itskevich, Thomas Ihn, M Henini, P. Moriarty, Alain Nogaret, PH Beton, L Eaves, pc main, J Middleton, M Heath

University of Birmingham

Research output: Contribution to journal › Article › peer-review

5 Citations (SciVal)

Abstract

A single-barrier GaAs/AlAs/GaAs heterostructure, with self-assembled In-based quantum dots incorporated in the AlAs tunnel barrier, exhibits a series of resonant peaks in the low temperature current–voltage characteristics. We argue that each peak arises fromsingle-electrontunneling through thediscrete zero-dimensionalstate of anindividualInAs dot. We use the tunneling for fine probing of the local density of states in the emitter-accumulation layer. Landau-quantized states are resolved at magnetic field B∥ as low as 0.2 T. Spin-splitting of the dot electron states has been observed forB⊥I.

Original language	English
Pages (from-to)	255-258
Number of pages	4
Journal	Superlattices and Microstructures
Volume	21
Issue number	2
DOIs	https://doi.org/10.1006/spmi.1996.0192
Publication status	Published - Mar 1997

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title = "Resonant magnetotunneling through individual self-assembled InAs quantum dots",

abstract = "A single-barrier GaAs/AlAs/GaAs heterostructure, with self-assembled In-based quantum dots incorporated in the AlAs tunnel barrier, exhibits a series of resonant peaks in the low temperature current–voltage characteristics. We argue that each peak arises fromsingle-electrontunneling through thediscrete zero-dimensionalstate of anindividualInAs dot. We use the tunneling for fine probing of the local density of states in the emitter-accumulation layer. Landau-quantized states are resolved at magnetic field B∥ as low as 0.2 T. Spin-splitting of the dot electron states has been observed forB⊥I.",

author = "A Thornton and IE Itskevich and Thomas Ihn and M Henini and P. Moriarty and Alain Nogaret and PH Beton and L Eaves and pc main and J Middleton and M Heath",

year = "1997",

month = mar,

doi = "10.1006/spmi.1996.0192",

language = "English",

volume = "21",

pages = "255--258",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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TY - JOUR

T1 - Resonant magnetotunneling through individual self-assembled InAs quantum dots

AU - Thornton, A

AU - Itskevich, IE

AU - Ihn, Thomas

AU - Henini, M

AU - Moriarty, P.

AU - Nogaret, Alain

AU - Beton, PH

AU - Eaves, L

AU - main, pc

AU - Middleton, J

AU - Heath, M

PY - 1997/3

Y1 - 1997/3

N2 - A single-barrier GaAs/AlAs/GaAs heterostructure, with self-assembled In-based quantum dots incorporated in the AlAs tunnel barrier, exhibits a series of resonant peaks in the low temperature current–voltage characteristics. We argue that each peak arises fromsingle-electrontunneling through thediscrete zero-dimensionalstate of anindividualInAs dot. We use the tunneling for fine probing of the local density of states in the emitter-accumulation layer. Landau-quantized states are resolved at magnetic field B∥ as low as 0.2 T. Spin-splitting of the dot electron states has been observed forB⊥I.

AB - A single-barrier GaAs/AlAs/GaAs heterostructure, with self-assembled In-based quantum dots incorporated in the AlAs tunnel barrier, exhibits a series of resonant peaks in the low temperature current–voltage characteristics. We argue that each peak arises fromsingle-electrontunneling through thediscrete zero-dimensionalstate of anindividualInAs dot. We use the tunneling for fine probing of the local density of states in the emitter-accumulation layer. Landau-quantized states are resolved at magnetic field B∥ as low as 0.2 T. Spin-splitting of the dot electron states has been observed forB⊥I.

U2 - 10.1006/spmi.1996.0192

DO - 10.1006/spmi.1996.0192

M3 - Article

SN - 0749-6036

VL - 21

SP - 255

EP - 258

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Resonant magnetotunneling through individual self-assembled InAs quantum dots

Abstract

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