Resonant magnetotunneling through individual self-assembled InAs quantum dots

A Thornton, IE Itskevich, Thomas Ihn, M Henini, P. Moriarty, Alain Nogaret, PH Beton, L Eaves, pc main, J Middleton, M Heath

Research output: Contribution to journalArticlepeer-review

5 Citations (SciVal)


A single-barrier GaAs/AlAs/GaAs heterostructure, with self-assembled In-based quantum dots incorporated in the AlAs tunnel barrier, exhibits a series of resonant peaks in the low temperature current–voltage characteristics. We argue that each peak arises fromsingle-electrontunneling through thediscrete zero-dimensionalstate of anindividualInAs dot. We use the tunneling for fine probing of the local density of states in the emitter-accumulation layer. Landau-quantized states are resolved at magnetic field B∥ as low as 0.2 T. Spin-splitting of the dot electron states has been observed forB⊥I.
Original languageEnglish
Pages (from-to)255-258
Number of pages4
JournalSuperlattices and Microstructures
Issue number2
Publication statusPublished - Mar 1997


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