Resonant magnetotunneling through individual self-assembled InAs quantum dots

IE Itskevich, Thomas Ihn, A Thornton, M Henini, TJ Foster, P. Moriarty, Alain Nogaret, PH Beton, L Eaves, pc main

Research output: Contribution to journalArticlepeer-review

110 Citations (SciVal)


Resonant peaks are observed in the low-temperature current-voltage I(V) characteristics of a single-barrier GaAs/AlAs/GaAs diode with InAs quantum dots incorporated in the AlAs tunnel barrier. We argue that each peak arises from single-electron tunneling through a discrete zero-dimensional state of an individual InAs dot in the barrier. Each peak splits into sharp components for magnetic field B∥I; the I(V) curve probes the density of Landau-quantized states in the emitter-accumulation layer. A dot size of ≊10 nm was estimated from the diamagnetic peak shift for B⊥I.
Original languageEnglish
Pages (from-to)16401-16404
Number of pages4
JournalPhysical Review B
Publication statusPublished - 15 Dec 1996


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