Resonant excitation of interfacial Si-O: possibility of nonthermal processing

J Diener; D Kovalev; F Koch

doi:10.1016/S0167-9317(01)00612-8

Resonant excitation of interfacial Si-O: possibility of nonthermal processing

J Diener
, D Kovalev
, F Koch

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	291-294
Number of pages	4
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(01)00612-8
Publication status	Published - 2001

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ID number: ISI:000172218100041

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title = "Resonant excitation of interfacial Si-O: possibility of nonthermal processing",

abstract = "Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.",

author = "J Diener and D Kovalev and F Koch",

note = "ID number: ISI:000172218100041",

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language = "English",

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AU - Diener, J

AU - Kovalev, D

AU - Koch, F

N1 - ID number: ISI:000172218100041

PY - 2001

Y1 - 2001

N2 - Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.

AB - Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.

U2 - 10.1016/S0167-9317(01)00612-8

DO - 10.1016/S0167-9317(01)00612-8

M3 - Article

SN - 0167-9317

VL - 59

SP - 291

EP - 294

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Resonant excitation of interfacial Si-O: possibility of nonthermal processing

Abstract

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