Resonant excitation of interfacial Si-O: possibility of nonthermal processing

J Diener, D Kovalev, F Koch

Research output: Contribution to journalArticlepeer-review

Abstract

Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)291-294
Number of pages4
JournalMicroelectronic Engineering
Volume59
Issue number1-4
Publication statusPublished - 2001

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