Resonant excitation of interfacial Si-O: possibility of nonthermal processing

J Diener; D Kovalev; F Koch

Resonant excitation of interfacial Si-O: possibility of nonthermal processing

J Diener, D Kovalev, F Koch

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	291-294
Number of pages	4
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
Publication status	Published - 2001

Bibliographical note

ID number: ISI:000172218100041

Cite this

@article{ee1b0a3de9ff47f49cf2c0bdcc4615ad,

title = "Resonant excitation of interfacial Si-O: possibility of nonthermal processing",

abstract = "Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.",

author = "J Diener and D Kovalev and F Koch",

note = "ID number: ISI:000172218100041",

year = "2001",

language = "English",

volume = "59",

pages = "291--294",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Resonant excitation of interfacial Si-O: possibility of nonthermal processing

AU - Diener, J

AU - Kovalev, D

AU - Koch, F

N1 - ID number: ISI:000172218100041

PY - 2001

Y1 - 2001

N2 - Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.

AB - Studying the heating of oxidized porous Si excited by IR-pulses from a CO2 laser we observe a time delay of a fraction of a gs for some infrared frequencies. For 1030 cm(-1) the transfer of energy is nearly instantaneous, We discuss the implications of these results for the nonthermal processing. The surface Si-O layer can be resonantly excited above the temperature of the adjoining Si. Specific vibration modes of the surface layer (1076 cm(-1), 1030 cm(-1)) give sharp resonances in the light generation. (C) 2001 Elsevier Science B.V. All rights reserved.

M3 - Article

SN - 0167-9317

VL - 59

SP - 291

EP - 294

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Resonant excitation of interfacial Si-O: possibility of nonthermal processing

Abstract

Bibliographical note

Fingerprint

Cite this