Resonant electron spin-flip Raman scattering in Zn1-xMnxTe

M. P. Halsall, P. J. Boyce, D. Wolverson, J. J. Davies, D. E. Ashenford, B. Lunn

Research output: Contribution to journalArticle

Abstract

We report the observation of spin-flip Raman scattering from photoexcited electrons in the dilute magnetic semiconductor Zn1-xMnxTe. In a 1μm epitaxial layer of Zn0.92Mn0.08Te grown by MBE on GaSb we observe a new Raman signal in the region near 120 cm-1 (∼ 15 meV). The signal is observed when the bandgap energy is tuned magnetically into resonance with the laser line (514 nm, 2.41 eV). The origin of the scattering is established unambiguously by the selection rules, the magnetic behaviour of the Raman shift and the quadratic dependence of the signal strength on excitation power.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
JournalSolid State Communications
Volume83
Issue number2
DOIs
Publication statusPublished - Jul 1992

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Halsall, M. P., Boyce, P. J., Wolverson, D., Davies, J. J., Ashenford, D. E., & Lunn, B. (1992). Resonant electron spin-flip Raman scattering in Zn1-xMnxTe. Solid State Communications, 83(2), 85-88. https://doi.org/10.1016/0038-1098(92)90880-I