RESONANT AND OFF-RESONANT PHENOMENA IN DOUBLE-BARRIER INTERBAND TUNNELING STRUCTURES

Alain Nogaret, M Maldonado, RE Carnahan, KP Martin, RJ Higgins, F Aristone, D K Maude, Jean-Claude Portal, JF Chen, AY Cho

Research output: Contribution to journalArticle

Abstract

We report the results of vertical-transport measurements performed on a GaSb/AlSb/ InAs/AlSb/InAs interband tunneling structure subjected to hydrostatic pressure and high magnetic fields applied both parallel and perpendicular to the current. Current-voltage characteristics exhibit both a main peak and a weaker feature at lower bias voltages whose behavior is compared to that of the main peak. Our analysis reveals that the effective current in the device can be viewed as the sum of an Esaki diodelike current and a resonant current associated with the ground state in the InAs well.
Original languageEnglish
Pages (from-to)13872 - 13875
Number of pages4
JournalPhysical Review B
Volume47
DOIs
Publication statusPublished - 15 May 1993

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