Resistive Random Access Memories (RRAMs) based on metal nanoparticles

Asal Kiazadeh, Paulo R. Rocha, Qian Chen, Henrique L. Gomes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.

Original languageEnglish
Title of host publicationTechnological Innovation for Sustainability - Second IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011, Proceedings
Pages591-595
Number of pages5
DOIs
Publication statusPublished - 8 Mar 2011
Event2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011 - Costa de Caparica, Portugal
Duration: 21 Feb 201123 Feb 2011

Publication series

NameIFIP Advances in Information and Communication Technology
Volume349 AICT
ISSN (Print)1868-4238

Conference

Conference2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011
CountryPortugal
CityCosta de Caparica
Period21/02/1123/02/11

Keywords

  • Nanoparticles
  • non-volatile memory
  • resistive switching

ASJC Scopus subject areas

  • Information Systems and Management

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