Resistive Random Access Memories (RRAMs) based on metal nanoparticles

Asal Kiazadeh; Paulo R. Rocha; Qian Chen; Henrique L. Gomes

doi:10.1007/978-3-642-19170-1_65

Resistive Random Access Memories (RRAMs) based on metal nanoparticles

Asal Kiazadeh, Paulo R. Rocha, Qian Chen, Henrique L. Gomes

Department of Electronic & Electrical Engineering

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

1 Citation (SciVal)

Abstract

It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.

Original language	English
Title of host publication	Technological Innovation for Sustainability - Second IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011, Proceedings
Pages	591-595
Number of pages	5
DOIs	https://doi.org/10.1007/978-3-642-19170-1_65
Publication status	Published - 8 Mar 2011
Event	2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011 - Costa de Caparica, Portugal Duration: 21 Feb 2011 → 23 Feb 2011

Publication series

Name	IFIP Advances in Information and Communication Technology
Volume	349 AICT
ISSN (Print)	1868-4238

Conference

Conference	2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011
Country/Territory	Portugal
City	Costa de Caparica
Period	21/02/11 → 23/02/11

Keywords

Nanoparticles
non-volatile memory
resistive switching

ASJC Scopus subject areas

Information Systems and Management

Access to Document

10.1007/978-3-642-19170-1_65

Cite this

Kiazadeh, A., Rocha, P. R., Chen, Q., & Gomes, H. L. (2011). Resistive Random Access Memories (RRAMs) based on metal nanoparticles. In Technological Innovation for Sustainability - Second IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011, Proceedings (pp. 591-595). (IFIP Advances in Information and Communication Technology; Vol. 349 AICT). https://doi.org/10.1007/978-3-642-19170-1_65

Resistive Random Access Memories (RRAMs) based on metal nanoparticles. / Kiazadeh, Asal; Rocha, Paulo R.; Chen, Qian et al.
Technological Innovation for Sustainability - Second IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011, Proceedings. 2011. p. 591-595 (IFIP Advances in Information and Communication Technology; Vol. 349 AICT).

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Kiazadeh, A, Rocha, PR, Chen, Q & Gomes, HL 2011, Resistive Random Access Memories (RRAMs) based on metal nanoparticles. in Technological Innovation for Sustainability - Second IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011, Proceedings. IFIP Advances in Information and Communication Technology, vol. 349 AICT, pp. 591-595, 2nd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011, Costa de Caparica, Portugal, 21/02/11. https://doi.org/10.1007/978-3-642-19170-1_65

Kiazadeh A, Rocha PR, Chen Q, Gomes HL. Resistive Random Access Memories (RRAMs) based on metal nanoparticles. In Technological Innovation for Sustainability - Second IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011, Proceedings. 2011. p. 591-595. (IFIP Advances in Information and Communication Technology). doi: 10.1007/978-3-642-19170-1_65

Kiazadeh, Asal ; Rocha, Paulo R. ; Chen, Qian et al. / Resistive Random Access Memories (RRAMs) based on metal nanoparticles. Technological Innovation for Sustainability - Second IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2011, Proceedings. 2011. pp. 591-595 (IFIP Advances in Information and Communication Technology).

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abstract = "It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. The planar structure design offers a series of advantages discussed in this contribution, which make it an ideal tool to elucidate the resistive switching phenomena.",

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Resistive Random Access Memories (RRAMs) based on metal nanoparticles

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Keywords

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