Abstract
Developing new memory concepts and devices has been one of the most productive fields of research for the past decade. There is a need for a nonvolatile memory technology based on resistance switching. An ideal memory element is a bistable rectifying diode that enables realization of a simple crossbar memory array with highest areal bit density. Ferroelectrics have been suggested to code digital information due to their intrinsic and stable binary electronic polarization. However, realization of a ferroelectric bistable rectifying diode is challenging since ferroelectricity and electrical conductivity are mutually exclusive and cannot coexist in a single compound. As a solution, lateral ferroelectric-semiconductor heterostructures have been suggested for the realization of ferroelectric diodes. Bistable rectifying diodes and their respective nonvolatile crossbar memory arrays based on ferroelectric-semiconductor lateral heterostructures have been successfully demonstrated with organic ferroelectrics and organic semiconductors. The present review focuses on the resistance switching in ferroelectric-semiconductor heterostructure rectifying diodes based on polymers and discusses the latest developments over the last decade.
| Original language | English |
|---|---|
| Article number | 021307 |
| Journal | Applied Physics Reviews |
| Volume | 7 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Jun 2020 |
Funding
The author wishes to thank Professor P. W. M. Blom and Professor D. M. de Leeuw for fruitful collaborations and discussions on this topic over the last decade. The research on ferroelectric memories has been financed over the years by University of Groningen, EU funding initiative ONE-P, Max-Planck Institute for Polymer Research, and Alexander von Humboldt Foundation within the framework of the Sofja Kovalevskaja Award.
ASJC Scopus subject areas
- General Physics and Astronomy