Resistance Spikes Induced By Gate-Controlled Valley-Splitting In Silicon

Kei Takashina, Akira Fujiwara, Yasuo Takahashi, Yoshiro Hirayama

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	International Journal of Modern Physics B
Volume	18
DOIs	https://doi.org/10.1142/S0217979204027104
Publication status	Published - 30 Nov 2004

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@article{37d750a0be5b41ad92d657b06e8e2097,

title = "Resistance Spikes Induced By Gate-Controlled Valley-Splitting In Silicon",

author = "Kei Takashina and Akira Fujiwara and Yasuo Takahashi and Yoshiro Hirayama",

year = "2004",

month = nov,

day = "30",

doi = "10.1142/S0217979204027104",

language = "English",

volume = "18",

journal = "International Journal of Modern Physics B",

issn = "0217-9792",

publisher = "World Scientific Publishing Co. Pte Ltd",

}

TY - JOUR

T1 - Resistance Spikes Induced By Gate-Controlled Valley-Splitting In Silicon

AU - Takashina, Kei

AU - Fujiwara, Akira

AU - Takahashi, Yasuo

AU - Hirayama, Yoshiro

PY - 2004/11/30

Y1 - 2004/11/30

UR - http://dx.doi.org/10.1142/S0217979204027104

U2 - 10.1142/S0217979204027104

DO - 10.1142/S0217979204027104

M3 - Article

VL - 18

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

SN - 0217-9792

ER -