Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells

Kei Takashina, Marc Aurele Brun, Takeshi Ota, Duncan Maude, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Yoshiro Hirayama

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)625
JournalAIP Conference Proceedings
Volume893
DOIs
Publication statusPublished - 10 Apr 2007

Cite this

Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells. / Takashina, Kei; Brun, Marc Aurele; Ota, Takeshi; Maude, Duncan; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Hirayama, Yoshiro.

In: AIP Conference Proceedings, Vol. 893, 10.04.2007, p. 625.

Research output: Contribution to journalArticle

Takashina, K, Brun, MA, Ota, T, Maude, D, Fujiwara, A, Ono, Y, Inokawa, H & Hirayama, Y 2007, 'Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells', AIP Conference Proceedings, vol. 893, pp. 625. https://doi.org/10.1063/1.2730046
Takashina, Kei ; Brun, Marc Aurele ; Ota, Takeshi ; Maude, Duncan ; Fujiwara, Akira ; Ono, Yukinori ; Inokawa, Hiroshi ; Hirayama, Yoshiro. / Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells. In: AIP Conference Proceedings. 2007 ; Vol. 893. pp. 625.
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