Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells

Kei Takashina; Marc Aurele Brun; Takeshi Ota; Duncan Maude; Akira Fujiwara; Yukinori Ono; Hiroshi Inokawa; Yoshiro Hirayama

doi:10.1063/1.2730046

Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells

Kei Takashina, Marc Aurele Brun, Takeshi Ota, Duncan Maude, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Yoshiro Hirayama

Department of Physics

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	625
Journal	AIP Conference Proceedings
Volume	893
DOIs	https://doi.org/10.1063/1.2730046
Publication status	Published - 10 Apr 2007

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10.1063/1.2730046

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title = "Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells",

author = "Kei Takashina and Brun, {Marc Aurele} and Takeshi Ota and Duncan Maude and Akira Fujiwara and Yukinori Ono and Hiroshi Inokawa and Yoshiro Hirayama",

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T1 - Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells

AU - Takashina, Kei

AU - Brun, Marc Aurele

AU - Ota, Takeshi

AU - Maude, Duncan

AU - Fujiwara, Akira

AU - Ono, Yukinori

AU - Inokawa, Hiroshi

AU - Hirayama, Yoshiro

PY - 2007/4/10

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UR - http://dx.doi.org/10.1063/1.2730046

U2 - 10.1063/1.2730046

DO - 10.1063/1.2730046

M3 - Article

SN - 0094-243X

VL - 893

SP - 625

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

ER -

Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells

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