Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells

Kei Takashina, Marc Aurele Brun, Takeshi Ota, Duncan Maude, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Yoshiro Hirayama

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)625
JournalAIP Conference Proceedings
Volume893
DOIs
Publication statusPublished - 10 Apr 2007

Cite this

Takashina, K., Brun, M. A., Ota, T., Maude, D., Fujiwara, A., Ono, Y., Inokawa, H., & Hirayama, Y. (2007). Resistance Ridges Along Filling Factor ν = 4i in SiO2/Si/SiO2 Quantum Wells. AIP Conference Proceedings, 893, 625. https://doi.org/10.1063/1.2730046