Abstract
For the first time, the all-optical refractive nonlinearity due to photogenerated carriers in an InGaAs/InGaAsP quantum well waveguide under various bias conditions is measured. with no bias, the nonlinearity has a slow recovery time, of the order of the recombination time of the carriers. for a coupled power of 4.3 W and a 600 fim long device, we measure a phase modulation of 7.5 ± 2 radians. Under forward bias the nonlinearity is effectively quenched. Under reverse bias the nonlinearity remains, although slightly reduced. in the latter case the recovery time is dramatically reduced to approximately 50 ps.
| Original language | English |
|---|---|
| Pages (from-to) | 1447-1449 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 27 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 1 Aug 1991 |
Keywords
- Nonlinear optics
- Semiconductor devices and materials
- Waveguides
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Repression and Speed Improvement of Photogenerated Carrier Induced Refractive Nonlinearity in InGaAs/InGaAsP Quantum Well Waveguide. / Penty, R. V.; Tsang, H. K.; White, I. H.; Grant, R. S.; Sibbett, W.; Whiteaway, J. E.A.
In: Electronics Letters, Vol. 27, No. 16, 01.08.1991, p. 1447-1449.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Repression and Speed Improvement of Photogenerated Carrier Induced Refractive Nonlinearity in InGaAs/InGaAsP Quantum Well Waveguide
AU - Penty, R. V.
AU - Tsang, H. K.
AU - White, I. H.
AU - Grant, R. S.
AU - Sibbett, W.
AU - Whiteaway, J. E.A.
PY - 1991/8/1
Y1 - 1991/8/1
N2 - For the first time, the all-optical refractive nonlinearity due to photogenerated carriers in an InGaAs/InGaAsP quantum well waveguide under various bias conditions is measured. with no bias, the nonlinearity has a slow recovery time, of the order of the recombination time of the carriers. for a coupled power of 4.3 W and a 600 fim long device, we measure a phase modulation of 7.5 ± 2 radians. Under forward bias the nonlinearity is effectively quenched. Under reverse bias the nonlinearity remains, although slightly reduced. in the latter case the recovery time is dramatically reduced to approximately 50 ps.
AB - For the first time, the all-optical refractive nonlinearity due to photogenerated carriers in an InGaAs/InGaAsP quantum well waveguide under various bias conditions is measured. with no bias, the nonlinearity has a slow recovery time, of the order of the recombination time of the carriers. for a coupled power of 4.3 W and a 600 fim long device, we measure a phase modulation of 7.5 ± 2 radians. Under forward bias the nonlinearity is effectively quenched. Under reverse bias the nonlinearity remains, although slightly reduced. in the latter case the recovery time is dramatically reduced to approximately 50 ps.
KW - Nonlinear optics
KW - Semiconductor devices and materials
KW - Waveguides
UR - http://www.scopus.com/inward/record.url?scp=0026205096&partnerID=8YFLogxK
U2 - 10.1049/el:19910907
DO - 10.1049/el:19910907
M3 - Article
VL - 27
SP - 1447
EP - 1449
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 16
ER -