Repression and Speed Improvement of Photogenerated Carrier Induced Refractive Nonlinearity in InGaAs/InGaAsP Quantum Well Waveguide

R. V. Penty; H. K. Tsang; I. H. White; R. S. Grant; W. Sibbett; J. E.A. Whiteaway

doi:10.1049/el:19910907

Repression and Speed Improvement of Photogenerated Carrier Induced Refractive Nonlinearity in InGaAs/InGaAsP Quantum Well Waveguide

R. V. Penty, H. K. Tsang, I. H. White, R. S. Grant, W. Sibbett, J. E.A. Whiteaway

Vice Chancellor's Office

Research output: Contribution to journal › Article › peer-review

Abstract

For the first time, the all-optical refractive nonlinearity due to photogenerated carriers in an InGaAs/InGaAsP quantum well waveguide under various bias conditions is measured. with no bias, the nonlinearity has a slow recovery time, of the order of the recombination time of the carriers. for a coupled power of 4.3 W and a 600 fim long device, we measure a phase modulation of 7.5 ± 2 radians. Under forward bias the nonlinearity is effectively quenched. Under reverse bias the nonlinearity remains, although slightly reduced. in the latter case the recovery time is dramatically reduced to approximately 50 ps.

Original language	English
Pages (from-to)	1447-1449
Number of pages	3
Journal	Electronics Letters
Volume	27
Issue number	16
DOIs	https://doi.org/10.1049/el:19910907
Publication status	Published - 1 Aug 1991

Keywords

Nonlinear optics
Semiconductor devices and materials
Waveguides

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19910907

Link to publication in Scopus

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title = "Repression and Speed Improvement of Photogenerated Carrier Induced Refractive Nonlinearity in InGaAs/InGaAsP Quantum Well Waveguide",

abstract = "For the first time, the all-optical refractive nonlinearity due to photogenerated carriers in an InGaAs/InGaAsP quantum well waveguide under various bias conditions is measured. with no bias, the nonlinearity has a slow recovery time, of the order of the recombination time of the carriers. for a coupled power of 4.3 W and a 600 fim long device, we measure a phase modulation of 7.5 ± 2 radians. Under forward bias the nonlinearity is effectively quenched. Under reverse bias the nonlinearity remains, although slightly reduced. in the latter case the recovery time is dramatically reduced to approximately 50 ps.",

keywords = "Nonlinear optics, Semiconductor devices and materials, Waveguides",

author = "Penty, {R. V.} and Tsang, {H. K.} and White, {I. H.} and Grant, {R. S.} and W. Sibbett and Whiteaway, {J. E.A.}",

year = "1991",

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doi = "10.1049/el:19910907",

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T1 - Repression and Speed Improvement of Photogenerated Carrier Induced Refractive Nonlinearity in InGaAs/InGaAsP Quantum Well Waveguide

AU - Penty, R. V.

AU - Tsang, H. K.

AU - White, I. H.

AU - Grant, R. S.

AU - Sibbett, W.

AU - Whiteaway, J. E.A.

PY - 1991/8/1

Y1 - 1991/8/1

N2 - For the first time, the all-optical refractive nonlinearity due to photogenerated carriers in an InGaAs/InGaAsP quantum well waveguide under various bias conditions is measured. with no bias, the nonlinearity has a slow recovery time, of the order of the recombination time of the carriers. for a coupled power of 4.3 W and a 600 fim long device, we measure a phase modulation of 7.5 ± 2 radians. Under forward bias the nonlinearity is effectively quenched. Under reverse bias the nonlinearity remains, although slightly reduced. in the latter case the recovery time is dramatically reduced to approximately 50 ps.

AB - For the first time, the all-optical refractive nonlinearity due to photogenerated carriers in an InGaAs/InGaAsP quantum well waveguide under various bias conditions is measured. with no bias, the nonlinearity has a slow recovery time, of the order of the recombination time of the carriers. for a coupled power of 4.3 W and a 600 fim long device, we measure a phase modulation of 7.5 ± 2 radians. Under forward bias the nonlinearity is effectively quenched. Under reverse bias the nonlinearity remains, although slightly reduced. in the latter case the recovery time is dramatically reduced to approximately 50 ps.

KW - Nonlinear optics

KW - Semiconductor devices and materials

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