Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique

SLS ELA n- and p-channel polysilicon TFTs fabricated with a novel technique were investigated, oriented both along the preferential and the non-preferential direction. The degradation mechanisms proved very different between n- and p-channel devices, while the channel orientation had a larger effect on n-channel devices than on p-ones. In order to probe the reasons causing this effect we applied DLTS analysis to both n- and p-channel devices oriented along both directions, receiving valuable information about the defectivity differences in n- and p-polysilicon films.