TY - JOUR
T1 - Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique
AU - Moschou, D. C.
AU - Exarchos, M. A.
AU - Kouvatsos, D. N.
AU - Papaioannou, G. J.
AU - Arapoyanni, A.
AU - Voutsas, A. T.
PY - 2008/8
Y1 - 2008/8
N2 - SLS ELA n- and p-channel polysilicon TFTs fabricated with a novel technique were investigated, oriented both along the preferential and the non-preferential direction. The degradation mechanisms proved very different between n- and p-channel devices, while the channel orientation had a larger effect on n-channel devices than on p-ones. In order to probe the reasons causing this effect we applied DLTS analysis to both n- and p-channel devices oriented along both directions, receiving valuable information about the defectivity differences in n- and p-polysilicon films.
AB - SLS ELA n- and p-channel polysilicon TFTs fabricated with a novel technique were investigated, oriented both along the preferential and the non-preferential direction. The degradation mechanisms proved very different between n- and p-channel devices, while the channel orientation had a larger effect on n-channel devices than on p-ones. In order to probe the reasons causing this effect we applied DLTS analysis to both n- and p-channel devices oriented along both directions, receiving valuable information about the defectivity differences in n- and p-polysilicon films.
UR - http://www.scopus.com/inward/record.url?scp=50249124049&partnerID=8YFLogxK
UR - https://doi.org/10.1016/j.microrel.2008.06.006
U2 - 10.1016/j.microrel.2008.06.006
DO - 10.1016/j.microrel.2008.06.006
M3 - Article
AN - SCOPUS:50249124049
VL - 48
SP - 1544
EP - 1548
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 8-9
ER -