Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique

D. C. Moschou, M. A. Exarchos, D. N. Kouvatsos, G. J. Papaioannou, A. Arapoyanni, A. T. Voutsas

Research output: Contribution to journalArticle

Abstract

SLS ELA n- and p-channel polysilicon TFTs fabricated with a novel technique were investigated, oriented both along the preferential and the non-preferential direction. The degradation mechanisms proved very different between n- and p-channel devices, while the channel orientation had a larger effect on n-channel devices than on p-ones. In order to probe the reasons causing this effect we applied DLTS analysis to both n- and p-channel devices oriented along both directions, receiving valuable information about the defectivity differences in n- and p-polysilicon films.

Original languageEnglish
Pages (from-to)1544-1548
Number of pages5
JournalMicroelectronics Reliability
Volume48
Issue number8-9
DOIs
Publication statusPublished - Aug 2008

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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