Abstract
SLS ELA n- and p-channel polysilicon TFTs fabricated with a novel technique were investigated, oriented both along the preferential and the non-preferential direction. The degradation mechanisms proved very different between n- and p-channel devices, while the channel orientation had a larger effect on n-channel devices than on p-ones. In order to probe the reasons causing this effect we applied DLTS analysis to both n- and p-channel devices oriented along both directions, receiving valuable information about the defectivity differences in n- and p-polysilicon films.
| Original language | English |
|---|---|
| Pages (from-to) | 1544-1548 |
| Number of pages | 5 |
| Journal | Microelectronics Reliability |
| Volume | 48 |
| Issue number | 8-9 |
| DOIs | |
| Publication status | Published - Aug 2008 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique'. Together they form a unique fingerprint.
Cite this
Moschou, D. C., Exarchos, M. A., Kouvatsos, D. N., Papaioannou, G. J., Arapoyanni, A., & Voutsas, A. T. (2008). Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique. Microelectronics Reliability, 48(8-9), 1544-1548. https://doi.org/10.1016/j.microrel.2008.06.006