Abstract
This is the first reported analysis, from first principles the physical mechanisms responsible for the reduction of the α-parameter in strained layer lasers as a result of using quantum well structures. α-values of approx.2 in 1% compressively strained lasers operating d.c. and under modulation conditions were measured. It will be determined from the results obtained whether the use of strain result to an apparent reduction of α-values under cw and dynamic conditions.
| Original language | English |
|---|---|
| Pages | 398-399 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 1 Dec 1994 |
| Event | Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe - Amsterdam, Neth Duration: 28 Aug 1994 → 2 Sept 1994 |
Conference
| Conference | Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe |
|---|---|
| City | Amsterdam, Neth |
| Period | 28/08/94 → 2/09/94 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
Fingerprint
Dive into the research topics of 'Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS