Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers

H. D. Summers, I. H. White, P. Rees, P. Blood

Research output: Contribution to conferencePaper

Abstract

This is the first reported analysis, from first principles the physical mechanisms responsible for the reduction of the α-parameter in strained layer lasers as a result of using quantum well structures. α-values of approx.2 in 1% compressively strained lasers operating d.c. and under modulation conditions were measured. It will be determined from the results obtained whether the use of strain result to an apparent reduction of α-values under cw and dynamic conditions.

Original languageEnglish
Pages398-399
Number of pages2
Publication statusPublished - 1 Dec 1994
EventProceedings of the 1994 Conference on Lasers and Electro-Optics Europe - Amsterdam, Neth
Duration: 28 Aug 19942 Sep 1994

Conference

ConferenceProceedings of the 1994 Conference on Lasers and Electro-Optics Europe
CityAmsterdam, Neth
Period28/08/942/09/94

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Summers, H. D., White, I. H., Rees, P., & Blood, P. (1994). Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers. 398-399. Paper presented at Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe, Amsterdam, Neth, .