Abstract
We present a new model to analyze the spatial characteristics of the output beam of conventional (straight-stripe) and tapered superluminescent light-emitting diodes. The device model includes both spontaneous and stimulated emission processes as well as a nonuniform carrier density distribution to correctly represent current spreading and carrier diffusion effects. Near- and far-field intensity profiles computed with this model are accurately verified over a wide range of injection currents by comparisons with experimental results measured from in-house fabricated devices. (C) 2003 Optical Society of America.
| Original language | English |
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| Pages (from-to) | 4341-4348 |
| Number of pages | 8 |
| Journal | Applied Optics |
| Volume | 42 |
| Issue number | 21 |
| Publication status | Published - 2003 |