Abstract

Raman spectroscopy of ZnSe crystals doped with phosphorus and gallium is described. The data are analysed in the context of previously reported optically detected magnetic resonance experiments which showed that substitutional phosphorus forms a deep acceptor 0.7 eV above the valence band. A Raman signal at 375 cm-1 corresponding to the T2 vibrational mode of a centre of Td symmetry is ascribed to the ionized state of the phosphorus acceptor. The results are consistent with the magnetic resonance data, which show that the phosphorus is not associated with a second impurity or defect.

Original languageEnglish
Pages (from-to)331-335
Number of pages5
JournalJournal of Crystal Growth
Volume117
Issue number1-4
DOIs
Publication statusPublished - 2 Feb 1992

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Raman studies of phosphorus-doped ZnSe'. Together they form a unique fingerprint.

Cite this