Abstract
An introduction to the theory of Raman scattering and the effects of symmetry on theselection rules governing the scattering process is followed by a brief review of developments inexperimental technique. An overview of some recent results in the application of Ramanspectroscopy to the study of low-dimensional semiconductors is then given, with somecomments on the likely development of the field.
| Original language | English |
|---|---|
| Title of host publication | Characterization of Semiconductor Heterostructures and Nanostructures (2nd ed.) |
| Editors | Carlo Lamberti, Giovanni Agostini |
| Place of Publication | Amsterdam, Netherlands |
| Publisher | Elsevier |
| Pages | 753-802 |
| Number of pages | 49 |
| Edition | 2nd |
| ISBN (Print) | 9780444595515 |
| DOIs | |
| Publication status | Published - 4 Mar 2013 |
Keywords
- Raman spectroscopy
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