Abstract
Rhenium diselenide (ReSe2) is a layered indirect gap semiconductor for which micromechanical cleavage can produce monolayers consisting of a plane of rhenium atoms with selenium atoms above and below. ReSe2 is unusual among the transition-metal dichalcogenides in having a low symmetry; it is triclinic, with four formula units per unit cell, and has the bulk space group P1. Experimental studies of Raman scattering in monolayer, few-layer, and bulk ReSe2 show a rich spectrum consisting of up to 16 of the 18 expected lines with good signal strength, pronounced in-plane anisotropy of the intensities, and no evidence of degradation of the sample during typical measurements. No changes in the frequencies of the Raman bands with layer thickness down to one monolayer are observed, but significant changes in relative intensity of the bands allow the determination of crystal orientation and of monolayer regions. Supporting theory includes calculations of the electronic band structure and Brillouin zone center phonon modes of bulk and monolayer ReSe2 as well as the Raman tensors determining the scattering intensity of each mode. It is found that, as for other transition-metal dichalcogenides, Raman scattering provides a powerful diagnostic tool for studying layer thickness and also layer orientation in few-layer ReSe2. (Graph Presented).
| Original language | English |
|---|---|
| Pages (from-to) | 11154-11164 |
| Number of pages | 11 |
| Journal | ACS Nano |
| Volume | 8 |
| Issue number | 11 |
| Early online date | 3 Nov 2014 |
| DOIs | |
| Publication status | Published - 25 Nov 2014 |
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Keywords
- Band structure
- Monolayer
- MoS
- Phonon
- Raman spectroscopy
- ReS
- ReSe
- Rhenium diselenide
- Transition-metal dichalcogenide
Cite this
Raman spectra of monolayer, few-layer, and bulk ReSe2 : An anisotropic layered semiconductor. / Wolverson, Daniel; Crampin, Simon; Kazemi, Asieh S.; Ilie, Adelina; Bending, Simon J.
In: ACS Nano, Vol. 8, No. 11, 25.11.2014, p. 11154-11164.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Raman spectra of monolayer, few-layer, and bulk ReSe2
T2 - An anisotropic layered semiconductor
AU - Wolverson, Daniel
AU - Crampin, Simon
AU - Kazemi, Asieh S.
AU - Ilie, Adelina
AU - Bending, Simon J.
PY - 2014/11/25
Y1 - 2014/11/25
N2 - Rhenium diselenide (ReSe2) is a layered indirect gap semiconductor for which micromechanical cleavage can produce monolayers consisting of a plane of rhenium atoms with selenium atoms above and below. ReSe2 is unusual among the transition-metal dichalcogenides in having a low symmetry; it is triclinic, with four formula units per unit cell, and has the bulk space group P1. Experimental studies of Raman scattering in monolayer, few-layer, and bulk ReSe2 show a rich spectrum consisting of up to 16 of the 18 expected lines with good signal strength, pronounced in-plane anisotropy of the intensities, and no evidence of degradation of the sample during typical measurements. No changes in the frequencies of the Raman bands with layer thickness down to one monolayer are observed, but significant changes in relative intensity of the bands allow the determination of crystal orientation and of monolayer regions. Supporting theory includes calculations of the electronic band structure and Brillouin zone center phonon modes of bulk and monolayer ReSe2 as well as the Raman tensors determining the scattering intensity of each mode. It is found that, as for other transition-metal dichalcogenides, Raman scattering provides a powerful diagnostic tool for studying layer thickness and also layer orientation in few-layer ReSe2. (Graph Presented).
AB - Rhenium diselenide (ReSe2) is a layered indirect gap semiconductor for which micromechanical cleavage can produce monolayers consisting of a plane of rhenium atoms with selenium atoms above and below. ReSe2 is unusual among the transition-metal dichalcogenides in having a low symmetry; it is triclinic, with four formula units per unit cell, and has the bulk space group P1. Experimental studies of Raman scattering in monolayer, few-layer, and bulk ReSe2 show a rich spectrum consisting of up to 16 of the 18 expected lines with good signal strength, pronounced in-plane anisotropy of the intensities, and no evidence of degradation of the sample during typical measurements. No changes in the frequencies of the Raman bands with layer thickness down to one monolayer are observed, but significant changes in relative intensity of the bands allow the determination of crystal orientation and of monolayer regions. Supporting theory includes calculations of the electronic band structure and Brillouin zone center phonon modes of bulk and monolayer ReSe2 as well as the Raman tensors determining the scattering intensity of each mode. It is found that, as for other transition-metal dichalcogenides, Raman scattering provides a powerful diagnostic tool for studying layer thickness and also layer orientation in few-layer ReSe2. (Graph Presented).
KW - Band structure
KW - Monolayer
KW - MoS
KW - Phonon
KW - Raman spectroscopy
KW - ReS
KW - ReSe
KW - Rhenium diselenide
KW - Transition-metal dichalcogenide
U2 - 10.1021/nn5053926
DO - 10.1021/nn5053926
M3 - Article
VL - 8
SP - 11154
EP - 11164
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 11
ER -