Raman scattering from acceptor and donor states in nitrogen-doped P-type zinc selenide

P. J. Boyce, J. J. Davies, D. Wolverson, K. Ohkawa, T. Mitsuyu

Research output: Contribution to journalConference article

Abstract

When ZnSe is doped with nitrogen during growth by molecular beam epitaxy to produce p-type material the effective acceptor concentration is limited by the formation of a new type of compensating donor centre at a depth of about 50 meV beneath the conduction band. Raman spectroscopy has been used to show that the nature of the nitrogen acceptors themselves is unchanged at high doping levels and, by means of spin-flip scattering, to provide independent confirmation of the existence of the new donor, which has a g-value of 1.36 ± 0.07.

Original languageEnglish
Pages (from-to)251-254
Number of pages4
JournalMaterials Science Forum
Volume182-184
Publication statusPublished - 1 Jan 1995
EventProceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria
Duration: 26 Sep 199428 Sep 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Boyce, P. J., Davies, J. J., Wolverson, D., Ohkawa, K., & Mitsuyu, T. (1995). Raman scattering from acceptor and donor states in nitrogen-doped P-type zinc selenide. Materials Science Forum, 182-184, 251-254.