Raman Scattering by Acceptors and Donors in p‐Type ZnSe

J. J. Davies; D. Wolverson; P. J. Boyce

doi:10.1002/pssb.2221870220

Raman Scattering by Acceptors and Donors in p‐Type ZnSe

J. J. Davies, D. Wolverson, P. J. Boyce

University of East Anglia

Research output: Contribution to journal › Article › peer-review

Abstract

Raman spectroscopy is used to study dopants introduced into ZnSe to produce p‐type material. Special attention is paid to nitrogen‐doped epitaxial layers and Raman scattering involving the electronic levels of nitrogen acceptors is reported. In these layers spin‐flip scattering by electrons at a new type of donor centre at a depth of about 50 meV is also observed. This new donor is believed to play an important role in the compensation process that limits the net acceptor concentrations attainable in this material.

Original language	English
Pages (from-to)	407-413
Number of pages	7
Journal	Physica Status Solidi (B)
Volume	187
Issue number	2
DOIs	https://doi.org/10.1002/pssb.2221870220
Publication status	Published - 1 Feb 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.2221870220

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@article{fdd62ec9e619495ebfa8831dbb098fe7,

title = "Raman Scattering by Acceptors and Donors in p‐Type ZnSe",

abstract = "Raman spectroscopy is used to study dopants introduced into ZnSe to produce p‐type material. Special attention is paid to nitrogen‐doped epitaxial layers and Raman scattering involving the electronic levels of nitrogen acceptors is reported. In these layers spin‐flip scattering by electrons at a new type of donor centre at a depth of about 50 meV is also observed. This new donor is believed to play an important role in the compensation process that limits the net acceptor concentrations attainable in this material.",

author = "Davies, {J. J.} and D. Wolverson and Boyce, {P. J.}",

year = "1995",

month = feb,

day = "1",

doi = "10.1002/pssb.2221870220",

language = "English",

volume = "187",

pages = "407--413",

journal = "Physica Status Solidi (B)",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "2",

}

TY - JOUR

T1 - Raman Scattering by Acceptors and Donors in p‐Type ZnSe

AU - Davies, J. J.

AU - Wolverson, D.

AU - Boyce, P. J.

PY - 1995/2/1

Y1 - 1995/2/1

N2 - Raman spectroscopy is used to study dopants introduced into ZnSe to produce p‐type material. Special attention is paid to nitrogen‐doped epitaxial layers and Raman scattering involving the electronic levels of nitrogen acceptors is reported. In these layers spin‐flip scattering by electrons at a new type of donor centre at a depth of about 50 meV is also observed. This new donor is believed to play an important role in the compensation process that limits the net acceptor concentrations attainable in this material.

AB - Raman spectroscopy is used to study dopants introduced into ZnSe to produce p‐type material. Special attention is paid to nitrogen‐doped epitaxial layers and Raman scattering involving the electronic levels of nitrogen acceptors is reported. In these layers spin‐flip scattering by electrons at a new type of donor centre at a depth of about 50 meV is also observed. This new donor is believed to play an important role in the compensation process that limits the net acceptor concentrations attainable in this material.

UR - http://www.scopus.com/inward/record.url?scp=84990683937&partnerID=8YFLogxK

U2 - 10.1002/pssb.2221870220

DO - 10.1002/pssb.2221870220

M3 - Article

AN - SCOPUS:84990683937

SN - 0370-1972

VL - 187

SP - 407

EP - 413

JO - Physica Status Solidi (B)

JF - Physica Status Solidi (B)

IS - 2

ER -

Raman Scattering by Acceptors and Donors in p‐Type ZnSe

Abstract

ASJC Scopus subject areas

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