Quaternary semiconductors with positive crystal field splitting: Potential high-efficiency spin-polarized electron sources

S Y Chen, W J Yin, J H Yang, X G Gong, Aron Walsh, S H Wei

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Traditional high efficiency spin-polarized electron sources (SPES) consist mainly of binary or pseudobinary zinc-blende GaAs based materials, whereas their ternary analogs II-IV-V(2) (II=Zn, Cd, IV=Si, Ge, Sn, and V=As) as well as II-VI ternary analogs I-III-VI(2) (I=Cu, Ag, III=Al, Ga, In, and VI=Se) have not drawn wide attention because their crystal field splitting Delta(CF) near the valence band maximum is either negative or close to zero in their ground state chalcopyrite structure. Using first-principles calculations, we show that some derivative quaternary I-III-II(2)-VI(4) and II-IV-III(2)-V(4) compounds can have coherent ground state stannite or kesterite structures with large and positive Delta(CF) due to their increased chemical and structural flexibility. We propose that ZnSiAl(2)As(4) and CdGeAl(2)As(4) in the stannite structure, and ZnSnGa(2)As(4) and CuAlCd(2)Se(4) in the kesterite structure could be good candidate SPES materials with high polarization and quantum efficiency.
Original languageEnglish
Article number052102
JournalApplied Physics Letters
Volume95
Issue number5
DOIs
Publication statusPublished - 2009

Keywords

  • aluminium compounds
  • valence bands
  • compounds
  • germanium compounds
  • ground states
  • strain
  • copper
  • space groups
  • gallium arsenide
  • II-VI
  • ab initio calculations
  • zinc compounds
  • electron spin polarisation
  • tin compounds
  • silicon compounds
  • semiconductors
  • ternary semiconductors
  • alloys
  • cadmium compounds
  • photoemission
  • crystal field interactions

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