Quantum well engineering in InGaN/GaN core-shell nanorod structures

C. G. Bryce, E. D. Le Boulbar, P. M. Coulon, P R Edwards, I. Gîrgel, D. W.E. Allsopp, P. A. Shields, R. W. Martin

Research output: Contribution to journalArticle

3 Citations (Scopus)
105 Downloads (Pure)

Abstract

We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

Original languageEnglish
Article number42LT01
Pages (from-to)1 - 7
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume50
Issue number42
DOIs
Publication statusPublished - 27 Sep 2017

Fingerprint

Nanorods
Semiconductor quantum wells
nanorods
quantum wells
Growth temperature
engineering
flat surfaces
Cathodoluminescence
Light emission
Light emitting diodes
cathodoluminescence
light emission
light emitting diodes
temperature

Keywords

  • cathodoluminescence
  • GaN
  • InGaN
  • LED
  • nanorod
  • nanostructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Bryce, C. G., Le Boulbar, E. D., Coulon, P. M., Edwards, P. R., Gîrgel, I., Allsopp, D. W. E., ... Martin, R. W. (2017). Quantum well engineering in InGaN/GaN core-shell nanorod structures. Journal of Physics D: Applied Physics, 50(42), 1 - 7. [42LT01]. https://doi.org/10.1088/1361-6463/aa8ae4

Quantum well engineering in InGaN/GaN core-shell nanorod structures. / Bryce, C. G.; Le Boulbar, E. D.; Coulon, P. M.; Edwards, P R; Gîrgel, I.; Allsopp, D. W.E.; Shields, P. A.; Martin, R. W.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 42, 42LT01, 27.09.2017, p. 1 - 7.

Research output: Contribution to journalArticle

Bryce, CG, Le Boulbar, ED, Coulon, PM, Edwards, PR, Gîrgel, I, Allsopp, DWE, Shields, PA & Martin, RW 2017, 'Quantum well engineering in InGaN/GaN core-shell nanorod structures', Journal of Physics D: Applied Physics, vol. 50, no. 42, 42LT01, pp. 1 - 7. https://doi.org/10.1088/1361-6463/aa8ae4
Bryce CG, Le Boulbar ED, Coulon PM, Edwards PR, Gîrgel I, Allsopp DWE et al. Quantum well engineering in InGaN/GaN core-shell nanorod structures. Journal of Physics D: Applied Physics. 2017 Sep 27;50(42):1 - 7. 42LT01. https://doi.org/10.1088/1361-6463/aa8ae4
Bryce, C. G. ; Le Boulbar, E. D. ; Coulon, P. M. ; Edwards, P R ; Gîrgel, I. ; Allsopp, D. W.E. ; Shields, P. A. ; Martin, R. W. / Quantum well engineering in InGaN/GaN core-shell nanorod structures. In: Journal of Physics D: Applied Physics. 2017 ; Vol. 50, No. 42. pp. 1 - 7.
@article{2db5907ff85748f1877555b03e0966f4,
title = "Quantum well engineering in InGaN/GaN core-shell nanorod structures",
abstract = "We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.",
keywords = "cathodoluminescence, GaN, InGaN, LED, nanorod, nanostructure",
author = "Bryce, {C. G.} and {Le Boulbar}, {E. D.} and Coulon, {P. M.} and Edwards, {P R} and I. G{\^i}rgel and Allsopp, {D. W.E.} and Shields, {P. A.} and Martin, {R. W.}",
year = "2017",
month = "9",
day = "27",
doi = "10.1088/1361-6463/aa8ae4",
language = "English",
volume = "50",
pages = "1 -- 7",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing",
number = "42",

}

TY - JOUR

T1 - Quantum well engineering in InGaN/GaN core-shell nanorod structures

AU - Bryce, C. G.

AU - Le Boulbar, E. D.

AU - Coulon, P. M.

AU - Edwards, P R

AU - Gîrgel, I.

AU - Allsopp, D. W.E.

AU - Shields, P. A.

AU - Martin, R. W.

PY - 2017/9/27

Y1 - 2017/9/27

N2 - We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

AB - We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

KW - cathodoluminescence

KW - GaN

KW - InGaN

KW - LED

KW - nanorod

KW - nanostructure

UR - http://www.scopus.com/inward/record.url?scp=85031101667&partnerID=8YFLogxK

UR - https://doi.org/10.1088/1361-6463/aa8ae4

UR - https://doi.org/10.1088/1361-6463/aa8ae4

U2 - 10.1088/1361-6463/aa8ae4

DO - 10.1088/1361-6463/aa8ae4

M3 - Article

VL - 50

SP - 1

EP - 7

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 42

M1 - 42LT01

ER -