Quantum well engineering in InGaN/GaN core-shell nanorod structures

C. G. Bryce; E. D. Le Boulbar; P. M. Coulon; P R Edwards; I. Gîrgel; D. W.E. Allsopp; P. A. Shields; R. W. Martin

doi:10.1088/1361-6463/aa8ae4

Quantum well engineering in InGaN/GaN core-shell nanorod structures

C. G. Bryce, E. D. Le Boulbar, P. M. Coulon, P R Edwards, I. Gîrgel, D. W.E. Allsopp, P. A. Shields, R. W. Martin

University of Strathclyde

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Abstract

We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

Original language	English
Article number	42LT01
Pages (from-to)	1 - 7
Number of pages	7
Journal	Journal of Physics D: Applied Physics
Volume	50
Issue number	42
DOIs	https://doi.org/10.1088/1361-6463/aa8ae4
Publication status	Published - 27 Sept 2017

Keywords

cathodoluminescence
GaN
InGaN
LED
nanorod
nanostructure

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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Bryce_2017_J._Phys._D%3A_Appl._Phys._50_42LT01
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Cite this

@article{2db5907ff85748f1877555b03e0966f4,

title = "Quantum well engineering in InGaN/GaN core-shell nanorod structures",

abstract = "We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.",

keywords = "cathodoluminescence, GaN, InGaN, LED, nanorod, nanostructure",

author = "Bryce, {C. G.} and {Le Boulbar}, {E. D.} and Coulon, {P. M.} and Edwards, {P R} and I. G{\^i}rgel and Allsopp, {D. W.E.} and Shields, {P. A.} and Martin, {R. W.}",

year = "2017",

month = sep,

day = "27",

doi = "10.1088/1361-6463/aa8ae4",

language = "English",

volume = "50",

pages = "1 -- 7",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing",

number = "42",

}

TY - JOUR

T1 - Quantum well engineering in InGaN/GaN core-shell nanorod structures

AU - Bryce, C. G.

AU - Le Boulbar, E. D.

AU - Coulon, P. M.

AU - Edwards, P R

AU - Gîrgel, I.

AU - Allsopp, D. W.E.

AU - Shields, P. A.

AU - Martin, R. W.

PY - 2017/9/27

Y1 - 2017/9/27

N2 - We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

AB - We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

KW - cathodoluminescence

KW - GaN

KW - InGaN

KW - LED

KW - nanorod

KW - nanostructure

UR - http://www.scopus.com/inward/record.url?scp=85031101667&partnerID=8YFLogxK

UR - https://doi.org/10.1088/1361-6463/aa8ae4

U2 - 10.1088/1361-6463/aa8ae4

DO - 10.1088/1361-6463/aa8ae4

M3 - Article

AN - SCOPUS:85031101667

SN - 0022-3727

VL - 50

SP - 1

EP - 7

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 42

M1 - 42LT01

ER -

Quantum well engineering in InGaN/GaN core-shell nanorod structures

Abstract

Keywords

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Quantum well engineering in InGaN/GaN core-shell nanorod structures

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