Quantum well engineering in InGaN/GaN core-shell nanorod structures

C. G. Bryce, E. D. Le Boulbar, P. M. Coulon, P R Edwards, I. Gîrgel, D. W.E. Allsopp, P. A. Shields, R. W. Martin

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Abstract

We report the ability to control relative InN incorporation in InGaN/GaN quantum wells (QWs) grown on the semi-polar and non-polar facets of a core-shell nanorod LED structure by varying the growth conditions. A study of the cathodoluminescence emitted from series of structures with different growth temperatures and pressures for the InGaN QW layer revealed that increasing the growth pressure had the effect of increasing InN incorporation on the semi-polar facets, while increasing the growth temperature improves the uniformity of light emission from the QWs on the non-polar facets.

Original languageEnglish
Article number42LT01
Pages (from-to)1 - 7
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume50
Issue number42
DOIs
Publication statusPublished - 27 Sep 2017

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Keywords

  • cathodoluminescence
  • GaN
  • InGaN
  • LED
  • nanorod
  • nanostructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Bryce, C. G., Le Boulbar, E. D., Coulon, P. M., Edwards, P. R., Gîrgel, I., Allsopp, D. W. E., ... Martin, R. W. (2017). Quantum well engineering in InGaN/GaN core-shell nanorod structures. Journal of Physics D: Applied Physics, 50(42), 1 - 7. [42LT01]. https://doi.org/10.1088/1361-6463/aa8ae4